Tang Tingting, Li Chaoyang, Luo Li
Information Materials and Device Applications Key Laboratory of Sichuan Provincial Universities, Chengdu University of Information Technology, Chengdu 610225, China.
Solorein Technology Inc, Chengdu 610209, China.
Sci Rep. 2016 Aug 1;6:30762. doi: 10.1038/srep30762.
Giant enhancement of spin Hall effect of tunneling light (SHETL) is theoretically proposed in a frustrated total internal reflection (FTIR) structure with hyperbolic metamaterial (HMM). We calculate the transverse shift of right-circularly polarized light in a SiO2-air-HMM-air-SiO2 waveguide and analyze the physical mechanism of the enhanced SHETL. The HMM anisotropy can greatly increase the transverse shift of polarized light even though HMM loss might reduce it. Compared with transverse shift of transmitted light through a single HMM slab with ZnAlO/ZnO multilayer, the maximum transverse shift of tunneling light through a FTIR structure with identical HMM can be significantly enlarged by more than three times which reaches -38 μm without any amplification method.
理论上提出在具有双曲线型超材料（HMM）的受抑全内反射（FTIR）结构中实现隧穿光自旋霍尔效应（SHETL）的巨大增强。我们计算了SiO₂-空气-HMM-空气-SiO₂波导中右旋圆偏振光的横向位移，并分析了增强的SHETL的物理机制。尽管HMM损耗可能会减小偏振光的横向位移，但HMM各向异性可极大地增加其横向位移。与通过具有ZnAlO/ZnO多层的单个HMM平板的透射光横向位移相比，通过具有相同HMM的FTIR结构的隧穿光的最大横向位移可在没有任何放大方法的情况下显著扩大三倍以上，达到-38μm。
