St. Petersburg Academic University, Khlopina 8/3, 194021, St. Petersburg, Russia. Ioffe Physical Technical Institute RAS, Politekhnicheskaya 26, 194021, St. Petersburg, Russia. ITMO University, Kronverkskiy pr. 49, 197101 St. Petersburg, Russia.
Nanotechnology. 2016 Sep 16;27(37):375602. doi: 10.1088/0957-4484/27/37/375602. Epub 2016 Aug 8.
We present experimental data on the length distributions of InAs nanowires grown by chemical beam epitaxy with Au catalyst nanoparticles obtained by thermal dewetting of Au film, Au colloidal nanoparticles and In droplets. Poissonian length distributions are observed in the first case. Au colloidal nanoparticles produce broader and asymmetric length distributions of InAs nanowires. However, the distributions can be strongly narrowed by removing the high temperature annealing step. The length distributions for the In-catalyzed growth are instead very broad. We develop a generic model that is capable of describing the observed behaviors by accounting for both the incubation time for nanowire growth and secondary nucleation of In droplets. These results allow us to formulate some general recipes for obtaining more uniform length distributions of III-V nanowires.
我们展示了通过热去湿处理 Au 薄膜、Au 胶体纳米粒子和 In 液滴得到的 Au 催化剂纳米粒子，在化学束外延生长的 InAs 纳米线的长度分布的实验数据。在第一种情况下观察到泊松长度分布。Au 胶体纳米粒子产生更宽和不对称的 InAs 纳米线长度分布。然而，通过去除高温退火步骤，可以强烈缩小分布。对于 In 催化生长，分布则非常宽。我们开发了一种通用模型，通过考虑纳米线生长的孵育时间和 In 液滴的二次成核，能够描述观察到的行为。这些结果使我们能够制定出获得更均匀的 III-V 纳米线长度分布的一些一般方法。
