School of Electrical Engineering (EE), Korea Advanced Institution of Science and Technology (KAIST) , Daejeon 34141, Republic of Korea.
NASA Ames Research Center , Moffett Field, California 94035, United States.
ACS Appl Mater Interfaces. 2016 Sep 14;8(36):23820-6. doi: 10.1021/acsami.6b06377. Epub 2016 Aug 29.
An electro-thermal annealing (ETA) method, which uses an electrical pulse of less than 100 ns, was developed to improve the electrical performance of array-level amorphous-oxide-semiconductor (AOS) thin-film transistors (TFTs). The practicality of the ETA method was experimentally demonstrated with transparent amorphous In-Ga-Zn-O (a-IGZO) TFTs. The overall electrical performance metrics were boosted by the proposed method: up to 205% for the trans-conductance (gm), 158% for the linear current (Ilinear), and 206% for the subthreshold swing (SS). The performance enhancement were interpreted by X-ray photoelectron microscopy (XPS), showing a reduction of oxygen vacancies in a-IGZO after the ETA. Furthermore, by virtue of the extremely short operation time (80 ns) of ETA, which neither provokes a delay of the mandatory TFTs operation such as addressing operation for the display refresh nor demands extra physical treatment, the semipermanent use of displays can be realized.
一种电热退火（ETA）方法，采用小于 100 ns 的电脉冲，被开发用于改善阵列级非晶氧化物半导体（AOS）薄膜晶体管（TFT）的电性能。使用透明非晶铟镓锌氧化物（a-IGZO）TFT 实验证明了 ETA 方法的实用性。所提出的方法提高了整体电性能指标：跨导（gm）提高了 205%，线性电流（Ilinear）提高了 158%，亚阈值摆幅（SS）提高了 206%。X 射线光电子能谱（XPS）解释了性能的增强，表明 a-IGZO 中的氧空位减少。此外，由于 ETA 的操作时间极短（80 ns），既不会引起显示刷新等强制性 TFT 操作的延迟，也不需要额外的物理处理，可以实现显示器的半永久性使用。
