Kim Hyun Jae, Han Chul Jong, Yoo Byungwook, Lee Jeongno, Lee Kimoon, Lee Kyu Hyoung, Oh Min Suk
Display Research Center, Korea Electronics Technology Institute (KETI), Seongnam, Gyeonggi-do 13509, Korea.
Department of Materials Science and Engineering, Yonsei University, Seoul 03722, Korea.
Micromachines (Basel). 2020 May 18;11(5):508. doi: 10.3390/mi11050508.
We report on the effects of the intense pulsed light (IPL) rapid annealing process and back-channel passivation on the solution-processed In-Ga-Zn-O (IGZO) thin film transistors (TFTs) array. To improve the electrical properties, stability and uniformity of IGZO TFTs, the oxide channel layers were treated by IPL at atmospheric ambient and passivated by photo-sensitive polyimide (PSPI). When we treated the IGZO channel layer by the IPL rapid annealing process, saturation field effect mobility and subthreshold swing (S.S.) were improved. And, to protect the back-channel of oxide channel layers from oxygen and water molecules, we passivated TFT devices with photo-sensitive polyimide. The IGZO TFTs on glass substrate treated by IPL rapid annealing without PSPI passivation showed the field effect mobility () of 1.54 cm/Vs and subthreshold swing (S.S.) of 0.708 V/decade. The PSPI-passivated IGZO TFTs showed higher of 2.17 cm/Vs than that of device without passivation process and improved S.S. of 0.225 V/decade. By using a simple and fast intense pulsed light treatment with an appropriate back-channel passivation layer, we could improve the electrical characteristics and hysteresis of IGZO-TFTs. We also showed the improved uniformity of electrical characteristics for IGZO TFT devices in the area of 10 × 40 mm. Since this IPL rapid annealing process could be performed at a low temperature, it can be applied to flexible electronics on plastic substrates in the near future.
我们报道了强脉冲光（IPL）快速退火工艺和背沟道钝化对溶液法制备的铟镓锌氧化物（IGZO）薄膜晶体管（TFT）阵列的影响。为了改善IGZO TFT的电学性能、稳定性和均匀性，在大气环境下用IPL对氧化物沟道层进行处理，并用光敏聚酰亚胺（PSPI）进行钝化。当我们通过IPL快速退火工艺处理IGZO沟道层时，饱和场效应迁移率和亚阈值摆幅（S.S.）得到了改善。并且，为了保护氧化物沟道层的背沟道免受氧和水分子的影响，我们用光敏聚酰亚胺对TFT器件进行钝化。未经PSPI钝化处理的玻璃基板上的IGZO TFT，其场效应迁移率（）为1.54 cm²/V·s，亚阈值摆幅（S.S.）为0.708 V/十倍频程。经PSPI钝化的IGZO TFT的迁移率更高，为2.17 cm²/V·s，高于未进行钝化处理的器件，且亚阈值摆幅改善为0.225 V/十倍频程。通过使用简单快速的强脉冲光处理并结合合适的背沟道钝化层，我们可以改善IGZO - TFT的电学特性和滞后现象。我们还展示了IGZO TFT器件在10×40 mm区域内电学特性的改善后的均匀性。由于这种IPL快速退火工艺可以在低温下进行，在不久的将来它可以应用于塑料基板上的柔性电子器件。
