钴掺杂 BiFeO 外延薄膜中极化旋转引起的压电响应增强。
Enhanced Piezoelectric Response due to Polarization Rotation in Cobalt-Substituted BiFeO Epitaxial Thin Films.
机构信息
Materials and Structures Laboratory, Tokyo Institute of Technology, Nagatsuta, Yokohama, 226-8503, Japan.
Institute of Engineering Innovation, University of Tokyo, Yayoi, Bunkyo, 113-8656, Japan.
出版信息
Adv Mater. 2016 Oct;28(39):8639-8644. doi: 10.1002/adma.201602450. Epub 2016 Aug 24.
Polarization rotation induced by an external electric field in piezoelectric materials such as PbZr Ti O is generally regarded as the origin of their large piezoelectric responses. Here, the piezoelectric responses of high-quality cobalt-substituted BiFeO epitaxial thin films with monoclinic distortions are systematically examined. It is demonstrated that polarization rotation plays a crucial role in improving the piezoelectric responses in this material.
在外电场作用下，诸如 PbZrTiOx 之类的压电材料中的极化旋转通常被认为是其大压电响应的起源。在此，系统地研究了具有单斜畸变的高质量钴取代 BiFeO 外延薄膜的压电响应。结果表明，极化旋转在改善该材料的压电响应方面起着至关重要的作用。
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