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基于孔径和表面结构同步调控的多种石墨烯纳米网的简易合成

Facile synthesis of diverse graphene nanomeshes based on simultaneous regulation of pore size and surface structure.

作者信息

Zhang Jia, Song Huaibing, Zeng Dawen, Wang Hao, Qin Ziyu, Xu Keng, Pang Aimin, Xie Changsheng

机构信息

State Key Laboratory of Material Processing and Die &Mould Technology, Nanomaterials and Smart Sensors Research Laboratory, Department of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, PR China.

Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Wuhan 430062, PR China.

出版信息

Sci Rep. 2016 Aug 26;6:32310. doi: 10.1038/srep32310.

Abstract

Recently, graphene nanomesh (GNM) has attracted great attentions due to its unique porous structure, abundant active sites, finite band gap and possesses potential applications in the fields of electronics, gas sensor/storage, catalysis, etc. Therefore, diverse GNMs with different physical and chemical properties are required urgently to meet different applications. Herein we demonstrate a facile synthetic method based on the famous Fenton reaction to prepare GNM, by using economically fabricated graphene oxide (GO) as a starting material. By precisely controlling the reaction time, simultaneous regulation of pore size from 2.9 to 11.1 nm and surface structure can be realized. Ultimately, diverse GNMs with tunable band gap and work function can be obtained. Specially, the band gap decreases from 4.5-2.3 eV for GO, which is an insulator, to 3.9-1.24 eV for GNM-5 h, which approaches to a semiconductor. The dual nature of electrophilic addition and oxidizability of HO(•) is responsible for this controllable synthesis. This efficient, low-cost, inherently scalable synthetic method is suitable for provide diverse and optional GNMs, and may be generalized to a universal technique.

摘要

最近,石墨烯纳米网(GNM)因其独特的多孔结构、丰富的活性位点、有限的带隙以及在电子、气体传感器/存储、催化等领域的潜在应用而备受关注。因此,迫切需要具有不同物理和化学性质的各种GNM来满足不同的应用需求。在此,我们展示了一种基于著名的芬顿反应的简便合成方法,以经济制备的氧化石墨烯(GO)为起始原料来制备GNM。通过精确控制反应时间,可以实现孔径从2.9到11.1nm的同时调节以及表面结构的调控。最终,可以获得具有可调带隙和功函数的各种GNM。特别地,带隙从作为绝缘体的GO的4.5 - 2.3eV降低到接近半导体的GNM - 5h的3.9 - 1.24eV。HO(•)的亲电加成和氧化性的双重性质导致了这种可控合成。这种高效、低成本、本质上可扩展的合成方法适用于提供各种可选的GNM,并且可能推广为一种通用技术。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fe35/4999802/621e9777d383/srep32310-f1.jpg

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