通过化学气相沉积在净化的氩气中定向生长石墨烯纳米网。

Directed growth of graphene nanomesh in purified argon via chemical vapor deposition.

机构信息

Key Laboratory of Advanced Micro/Nano Functional Materials, Department of Physics and Electronic Engineering, Xinyang Normal University, Xinyang 464000, People's Republic of China. Energy-Saving Building Materials Innovative Collaboration Center, Xinyang Normal University, Xinyang 464000, People's Republic of China. National Laboratory of Solid State Microstructures, Department of Physics, Nanjing University, Nanjing 210093, People's Republic of China.

出版信息

Nanotechnology. 2017 Jun 16;28(24):245604. doi: 10.1088/1361-6528/aa7044.

DOI:10.1088/1361-6528/aa7044

PMID:28540865

Abstract

Graphene nanomeshes (GNMs), new graphene nanostructures with tunable bandgaps, are potential building blocks for future electronic or photonic devices, and energy storage and conversion materials. In previous works, GNMs have been successfully prepared on Cu foils by the H etching effect. In this paper, we investigated the effect of Ar on the preparation of GNMs, and how the mean density and shape of them vary with growth time. In addition, scanning electron microscopy (SEM) and high resolution transmission electron microscopy (TEM) revealed the typical hexagonal structure of GNM. Atomic force microscopy (AFM) and x-ray photoelectron spectroscopy (XPS) indicated that large copper oxide nanoparticles produced by oxidization in purified Ar can play an essential catalytic role in preparing GNMs. Then, we exhibited the key reaction details for each growth process and proposed a growth mechanism of GNMs in purified Ar.

摘要

石墨烯纳米网（GNMs）是一种具有可调带隙的新型石墨烯纳米结构，有望成为未来电子或光子器件、储能和转换材料的基本构建模块。在以前的工作中，通过 H 刻蚀效应已成功在 Cu 箔上制备出 GNMs。在本文中，我们研究了 Ar 对 GNMs 制备的影响，以及它们的平均密度和形状随生长时间的变化。此外，扫描电子显微镜（SEM）和高分辨率透射电子显微镜（TEM）揭示了 GNM 的典型六边形结构。原子力显微镜（AFM）和 X 射线光电子能谱（XPS）表明，在纯化 Ar 中氧化产生的大铜氧化物纳米颗粒可以在制备 GNMs 中发挥重要的催化作用。然后，我们展示了每个生长过程的关键反应细节，并提出了在纯化 Ar 中生长 GNMs 的机制。