Department of Physics and Astronomy, ‡Department of Chemistry, and ¶Department of Chemical Engineering and Materials Science, Univerisity of California , Irvine, California 92697, United States.
ACS Nano. 2016 Sep 27;10(9):8233-42. doi: 10.1021/acsnano.6b04022. Epub 2016 Sep 6.
The preparation by electrodeposition of transverse nanowire electroluminescent junctions (tn-ELJs) is described, and the electroluminescence (EL) properties of these devices are characterized. The lithographically patterned nanowire electrodeposition process is first used to prepare long (millimeters), linear, nanocrystalline CdSe nanowires on glass. The thickness of these nanowires along the emission axis is 60 nm, and the width, wCdSe, along the electrical axis is adjustable from 100 to 450 nm. Ten pairs of nickel-gold electrical contacts are then positioned along the axis of this nanowire using lithographically directed electrodeposition. The resulting linear array of nickel-CdSe-gold junctions produces EL with an external quantum efficiency, EQE, and threshold voltage, Vth, that depend sensitively on wCdSe. EQE increases with increasing electric field and also with increasing wCdSe, and Vth also increases with wCdSe and, therefore, the electrical resistance of the tn-ELJs. Vth down to 1.8(±0.2) V (for wCdSe ≈ 100 nm) and EQE of 5.5(±0.5) × 10(-5) (for wCdSe ≈ 450 nm) are obtained. tn-ELJs produce a broad EL emission envelope, spanning the wavelength range from 600 to 960 nm.
通过电沉积制备横向纳米线电致发光结（tn-ELJ），并对这些器件的电致发光（EL）性能进行了表征。首先，使用光刻图案化的纳米线电沉积工艺在玻璃上制备长（毫米）、线性、纳米晶 CdSe 纳米线。这些纳米线沿发射轴的厚度为 60nm，沿电轴的宽度 wCdSe 可从 100nm 调节至 450nm。然后，使用光刻定向电沉积将十对镍金电触点沿纳米线的轴定位。由此产生的镍-CdSe-金线性阵列结产生 EL，其外量子效率 EQE 和阈值电压 Vth 对 wCdSe 敏感。EQE 随电场的增加而增加，也随 wCdSe 的增加而增加，而 Vth 也随 wCdSe 增加，因此 tn-ELJ 的电阻增加。获得了低至 1.8(±0.2)V（对于 wCdSe ≈ 100nm）和 5.5(±0.5)×10(-5)（对于 wCdSe ≈ 450nm）的 EQE。tn-ELJ 产生宽的 EL 发射包络，横跨 600 至 960nm 的波长范围。
