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利用缺失层提高表面等离子体共振传感器的品质因数

Figure of merit enhancement of surface plasmon resonance sensors using absentee layer.

作者信息

Chen Zhaoyang, Zhao Xin, Lin Chengyou, Chen Shujing, Yin Liang, Ding Yingchun

出版信息

Appl Opt. 2016 Sep 1;55(25):6832-5. doi: 10.1364/AO.55.006832.

DOI:10.1364/AO.55.006832
PMID:27607256
Abstract

By adding an absentee layer on the top of the metallic layer, the figure of merit (FOM) of a surface plasmon resonance (SPR) sensor with Kretschmann configuration was enhanced, without changing the resonance angle and the reflectance at the resonance angle. Comparing with a traditional SPR sensor, the FOM of the SPR sensor with an absentee layer composed of either 1367 nm thick KCl or 235 nm thick SiN can be improved by 5.53% or 11.41%, respectively. The enhancement of the FOM should be attributed to the faster decrease of the full width at half-maximum than the sensitivity after an absentee layer was applied in the SPR sensor.

摘要

通过在金属层顶部添加一个缺失层,在不改变共振角和共振角处反射率的情况下,具有Kretschmann结构的表面等离子体共振(SPR)传感器的品质因数(FOM)得到了提高。与传统的SPR传感器相比,由1367nm厚的KCl或235nm厚的SiN组成的缺失层的SPR传感器的FOM分别可以提高5.53%或11.41%。FOM的提高应归因于在SPR传感器中应用缺失层后,半高宽的下降速度比灵敏度快。

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