具有807兆赫兹调制带宽的高速405纳米超发光二极管（SLD）。

High-speed 405-nm superluminescent diode (SLD) with 807-MHz modulation bandwidth.

作者信息

Shen Chao, Lee Changmin, Ng Tien Khee, Nakamura Shuji, Speck James S, DenBaars Steven P, Alyamani Ahmed Y, El-Desouki Munir M, Ooi Boon S

出版信息

Opt Express. 2016 Sep 5;24(18):20281-6. doi: 10.1364/OE.24.020281.

DOI:10.1364/OE.24.020281

PMID:27607634

Abstract

III-nitride LEDs are fundamental components for visible-light communication (VLC). However, the modulation bandwidth is inherently limited by the relatively long carrier lifetime. In this letter, we present the 405 nm emitting superluminescent diode (SLD) with tilted facet design on semipolar GaN substrate, showing a broad emission of ~9 nm at 20 mW optical power. Owing to the fast recombination (τ<0.35 ns) through the amplified spontaneous emission, the SLD exhibits a significantly large 3-dB bandwidth of 807 MHz. A data rate of 1.3 Gbps with a bit-error rate of 2.9 × 10 was obtained using on-off keying modulation scheme, suggesting the SLD being a high-speed transmitter for VLC applications.

摘要

III族氮化物发光二极管是可见光通信（VLC）的基本组件。然而，调制带宽本质上受到相对较长载流子寿命的限制。在本信函中，我们展示了在半极性氮化镓衬底上采用倾斜刻面设计的405纳米发光超辐射二极管（SLD），在20毫瓦光功率下显示出约9纳米的宽发射光谱。由于通过放大自发辐射实现的快速复合（τ<0.35纳秒），该超辐射二极管展现出高达807兆赫兹的显著大3分贝带宽。使用开关键控调制方案获得了1.3吉比特每秒的数据速率和2.9×10的误码率，这表明该超辐射二极管是用于可见光通信应用的高速发射器。