具有长波长发射的半极性（11-22）氮化铟镓/氮化镓发光二极管的高调制度带宽

High Modulation Bandwidth of Semipolar (11-22) InGaN/GaN LEDs with Long Wavelength Emission.

作者信息

Haggar Jack Ih, Cai Yuefei, Ghataora Suneal S, Smith Richard M, Bai Jie, Wang Tao

机构信息

Department of Electronic and Electrical Engineering, The University of Sheffield, Sheffield S1 3JD, United Kingdom.

出版信息

ACS Appl Electron Mater. 2020 Aug 25;2(8):2363-2368. doi: 10.1021/acsaelm.0c00399. Epub 2020 Jul 16.

DOI:10.1021/acsaelm.0c00399

PMID:32904914

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC7461145/

Abstract

Visible light communication requires III-nitride LEDs with a high modulation bandwidth but have c-plane limitations. General illumination requires green/yellow III-nitride LEDs with high optical efficiency that are difficult to achieve on c-plane substrates. Micro-LEDs with a low efficiency are used to obtain a high modulation bandwidth. This paper demonstrates a record modulation bandwidth of 540 MHz for our semipolar green LEDs with a broad area. Semipolar yellow and amber LEDs with modulation bandwidths of 350 and 140 MHz, respectively, have also been reported, and are the longest wavelength III-nitride LEDs. These results agree with differential carrier lifetime measurements.

摘要

可见光通信需要具有高调制带宽但存在c面限制的III族氮化物发光二极管。一般照明需要具有高光学效率的绿色/黄色III族氮化物发光二极管，而这在c面衬底上难以实现。具有低效率的微型发光二极管被用于获得高调制带宽。本文展示了我们大面积半极性绿色发光二极管创纪录的540 MHz调制带宽。还报道了调制带宽分别为350 MHz和140 MHz的半极性黄色和琥珀色发光二极管，它们是波长最长的III族氮化物发光二极管。这些结果与差分载流子寿命测量结果相符。