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空心多孔 VO/C 纳米卷作为锂离子电池的高性能阳极。

Hollow Porous VO/C Nanoscrolls as High-Performance Anodes for Lithium-Ion Batteries.

机构信息

Institute for Advanced Materials and Technology, University of Science and Technology Beijing , 30 Xueyuan Road, Haidian District, 100083, Beijing, P. R. China.

出版信息

ACS Appl Mater Interfaces. 2016 Oct 5;8(39):25954-25961. doi: 10.1021/acsami.6b07439. Epub 2016 Sep 20.

DOI:10.1021/acsami.6b07439
PMID:27610474
Abstract

Novel hollow porous VO/C nanoscrolls are synthesized by an annealing process with the VO/octadecylamine (ODA) nanoscrolls as both vanadium and carbon sources. In the preparation, the VO/ODA nanoscrolls are first achieved by a two-phase solvothermal method using ammonium metavanadat as the precursor. Upon subsequent heating, the intercalated amines between the vanadate layers in the VO/ODA nanoscrolls decompose into gases, which escape from inside the nanoscrolls and leave sufficient pores in the walls. As the anodes of lithium-ion batteries (LIBs), such hollow porous VO/C nanoscrolls possess exceedingly high capacity and rate capability (904 mAh g at 1 A g) and long cyclic stability (872 mAh g after 210 cycles at 1 A g). The good performance is derived from the unique structural features of the hollow hierarchical porous nanoscrolls with low crystallinity, which could significantly suppress irreversible Li trapping as well as improve Li diffusion kinetics. This universal method of annealing amine-intercalated oxide could be widely applied to the fabrication of a variety of porous electrode materials for high-performance LIBs and supercapacitors.

摘要

新型中空多孔 VO/C 纳米卷是通过退火工艺合成的,以 VO/十八胺(ODA)纳米卷为钒源和碳源。在制备过程中,首先采用两相溶剂热法,以偏钒酸铵为前驱体制备 VO/ODA 纳米卷。随后加热时,VO/ODA 纳米卷中夹层胺分解成气体,从纳米卷内部逸出,在壁上留下足够的孔。作为锂离子电池(LIBs)的阳极,这种中空多孔 VO/C 纳米卷具有极高的容量和倍率性能(1 A g 时为 904 mAh g)和长循环稳定性(1 A g 时 210 次循环后为 872 mAh g)。优异的性能源于中空分级多孔纳米卷的独特结构特征,低结晶度可以显著抑制不可逆的 Li 捕获并提高 Li 扩散动力学。这种退火胺插层氧化物的通用方法可广泛应用于制备各种用于高性能 LIBs 和超级电容器的多孔电极材料。

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ACS Omega. 2022 Sep 26;7(40):35552-35561. doi: 10.1021/acsomega.2c02833. eCollection 2022 Oct 11.