Department of Materials Science and Engineering, University of California-Davis , Davis, California 95616, United States.
Department of Electronics and Telecommunications, Norwegian University of Science and Technology , NO-7491 Trondheim, Norway.
ACS Nano. 2016 Sep 27;10(9):8545-51. doi: 10.1021/acsnano.6b03770. Epub 2016 Sep 14.
Engineered topological spin textures with submicron dimensions in magnetic materials have emerged in recent years as the building blocks for various spin-based memory devices. Examples of these magnetic configurations include magnetic skyrmions, vortices, and domain walls. Here, we show the ability to control and characterize the evolution of spin textures in complex oxide micromagnets as a function of temperature through the delicate balance of fundamental materials parameters, micromagnet geometries, and epitaxial strain. These results demonstrate that in order to fully describe the observed spin textures, it is necessary to account for the spatial variation of the magnetic parameters within the micromagnet. This study provides the framework to accurately characterize such structures, leading to efficient design of spin-based memory devices based on complex oxide thin films.
近年来，在磁性材料中具有亚微米尺寸的工程拓扑自旋纹理作为各种基于自旋的存储器件的基本结构出现。这些磁性结构的例子包括磁斯格明子、涡旋和畴壁。在这里，我们通过精细地平衡基本材料参数、微磁体几何形状和外延应变，展示了在复杂氧化物微磁铁中控制和描述自旋纹理随温度演化的能力。这些结果表明，为了完全描述观察到的自旋纹理，有必要考虑微磁铁中磁参数的空间变化。这项研究为准确地描述这些结构提供了框架，从而基于复杂氧化物薄膜有效地设计基于自旋的存储器件。
