School of Physics and Astronomy, Cardiff University , Cardiff CF24 3AA, United Kingdom.
Department of Chemistry, University of Fribourg , Fribourg CH-1700, Switzerland.
ACS Appl Mater Interfaces. 2016 Oct 5;8(39):26220-26225. doi: 10.1021/acsami.6b08286. Epub 2016 Sep 26.
With the large differences in surface energy between film and substrate in combination with the low sticking coefficient of hydrocarbon radicals, nanocrystalline diamond growth on foreign substrates typically results in poor nucleation densities. A seeding technique is therefore required to realize pinhole-free and thin coalesced films. In this work, a chemical nucleation method for growth of diamond on nondiamond substrates based on 2,2-divinyladamantane is shown. After treating with the carbon-containing DVA, the chemically treated wafers were exposed to low-power-density plasma, known as the incubation phase, to facilitate the formation of diamond nucleation sites followed by a high-power-density growth regime to produce coalesced films. The resulting films demonstrate high crystallinity, whereas the Raman spectra suggest high-quality diamond with low sp content.
在薄膜和衬底之间存在着巨大的表面能差异，再加上碳氢自由基的附着系数低，因此在异质衬底上生长纳米金刚石通常会导致成核密度较差。因此，需要采用一种成核技术来实现无针孔和薄的聚结膜。在这项工作中，展示了一种基于 2,2-二乙烯基金刚烷（DVA）的在非金刚石衬底上生长金刚石的化学成核方法。在用含碳的 DVA 处理后，将化学处理的晶片暴露于低功率密度等离子体（称为孵化阶段）中，以促进金刚石成核点的形成，然后进入高功率密度生长阶段以产生聚结膜。所得的薄膜表现出高结晶度，而拉曼光谱表明具有低 sp3 含量的高质量金刚石。
