Augel L, Fischer I A, Hornung F, Dressel M, Berrier A, Oehme M, Schulze J
Opt Lett. 2016 Sep 15;41(18):4398-400. doi: 10.1364/OL.41.004398.
GeSn as a group-IV material opens up new possibilities for realizing photonic device concepts in Si-compatible fabrication processes. Here we present results of the ellipsometric characterization of highly p- and n-type doped GeSn alloys deposited on Si substrates investigated in the wavelength range from 1 to 16 μm. We discuss the suitability of these films for integrated plasmonic applications in the infrared region.
锗锡作为一种IV族材料，为在与硅兼容的制造工艺中实现光子器件概念开辟了新的可能性。在此，我们展示了在1至16μm波长范围内对沉积在硅衬底上的高p型和n型掺杂锗锡合金进行椭偏表征的结果。我们讨论了这些薄膜在红外区域用于集成等离子体应用的适用性。
