Augel Lion, Schlipf Jon, Bullert Sergej, Bürzele Sebastian, Schulze Jörg, Fischer Inga A
Micro and Nano Systems, Brandenburg University of Technology Cottbus-Senftenberg, 03046, Cottbus, Germany.
Institute of Semiconductor Engineering, University of Stuttgart, 70569, Stuttgart, Germany.
Sci Rep. 2021 Mar 11;11(1):5723. doi: 10.1038/s41598-021-85012-z.
Incorporating group IV photonic nanostructures within active top-illuminated photonic devices often requires light-transmissive contact schemes. In this context, plasmonic nanoapertures in metallic films can not only be realized using CMOS compatible metals and processes, they can also serve to influence the wavelength-dependent device responsivities. Here, we investigate crescent-shaped nanoapertures in close proximity to Ge-on-Si PIN nanopillar photodetectors both in simulation and experiment. In our geometries, the absorption within the devices is mainly shaped by the absorption characteristics of the vertical semiconductor nanopillar structures (leaky waveguide modes). The plasmonic resonances can be used to influence how incident light couples into the leaky modes within the nanopillars. Our results can serve as a starting point to selectively tune our device geometries for applications in spectroscopy or refractive index sensing.
将IV族光子纳米结构集成到有源顶部照明光子器件中通常需要透光接触方案。在这种情况下，金属薄膜中的等离子体纳米孔径不仅可以使用与CMOS兼容的金属和工艺来实现，还可以用于影响与波长相关的器件响应率。在这里，我们通过模拟和实验研究了与硅基锗PIN纳米柱光电探测器紧密相邻的新月形纳米孔径。在我们的几何结构中，器件内的吸收主要由垂直半导体纳米柱结构（泄漏波导模式）的吸收特性决定。等离子体共振可用于影响入射光如何耦合到纳米柱内的泄漏模式中。我们的结果可以作为一个起点，为光谱学或折射率传感应用选择性地调整我们的器件几何结构。
