Nagashima Kazuki, Yoshida Hideto, Klamchuen Annop, Kanai Masaki, Meng Gang, Zhuge Fuwei, He Yong, Anzai Hiroshi, Zhu Zetao, Suzuki Masaru, Boudot Mickaël, Takeda Seiji, Yanagida Takeshi
The Institute for Materials Chemistry and Engineering, Kyushu University , 6-1 Kasuga-Koen, Kasuga, Fukuoka 816-8580, Japan.
The Institute of Scientific and Industrial Research, Osaka University , 8-1 Mihogaoka Ibaraki, Osaka 567-0047, Japan.
ACS Appl Mater Interfaces. 2016 Oct 19;8(41):27892-27899. doi: 10.1021/acsami.6b09761. Epub 2016 Oct 10.
Here we show a rational strategy to fabricate single crystalline NiO nanowires via a vapor-liquid-solid (VLS) route, which essentially allows us to tailor the diameter and the spatial position. Our strategy is based on the suppression of the nucleation at vapor-solid (VS) interface, which promotes nucleation only at the liquid-solid (LS) interface. Manipulating both the supplied material fluxes (oxygen and metal) and the growth temperature enables enhancement of the nucleation only at the LS interface. Furthermore, this strategy allows us to reduce the growth temperature of single crystalline NiO nanowires down to 550 °C, which is the lowest growth temperature so far reported.
在这里，我们展示了一种通过气-液-固（VLS）途径制备单晶NiO纳米线的合理策略，这一策略本质上使我们能够调整纳米线的直径和空间位置。我们的策略基于抑制气-固（VS）界面处的成核，从而仅促进液-固（LS）界面处的成核。通过控制供应的物质通量（氧气和金属）以及生长温度，能够仅在LS界面处增强成核。此外，该策略使我们能够将单晶NiO纳米线的生长温度降低至550°C，这是迄今为止报道的最低生长温度。
