金属氧化物叠层电子传输层用于高效倒置量子点发光二极管。
Metal-Oxide Stacked Electron Transport Layer for Highly Efficient Inverted Quantum-Dot Light Emitting Diodes.
机构信息
Advanced Display Research Center (ADRC), Department of Information Display, Kyung Hee University , Dongdaemoon-ku, Seoul 130-701, Korea.
出版信息
ACS Appl Mater Interfaces. 2016 Oct 26;8(42):28727-28736. doi: 10.1021/acsami.6b10314. Epub 2016 Oct 11.
We report highly efficient inverted quantum-dot light emitting diodes (QLEDs) using an Al doped ZnO (AZO)/Li doped ZnO (LZO) stack electron transport layer (ETL). An introduction of the LZO layer on AZO improved the current and power efficiencies of the green (G-) QLEDs from 10.5 to 34.0 cd A and from 5.4 to 29.6 lm W, respectively. The red (R-), G-, and blue (B-) QLEDs fabricated in this work exhibited the maximum external quantum efficiencies (EQEs) of 8.4, 12.5, and 4.3%, respectively. It is found from time-resolved photoluminescence (PL) and transient electroluminescence (EL) decay that exciton loss at the interface between the ETL and the emission layer can be significantly reduced by introducing LZO.
我们报告了使用掺铝氧化锌 (AZO)/掺锂氧化锌 (LZO) 堆叠电子传输层 (ETL) 的高效倒置量子点发光二极管 (QLED)。在 AZO 上引入 LZO 层，分别将绿色 (G-) QLED 的电流和功率效率从 10.5 cd A 提高到 34.0 cd A，从 5.4 lm W 提高到 29.6 lm W。在这项工作中制备的红色 (R-)、G- 和蓝色 (B-) QLED 的最大外量子效率 (EQE) 分别为 8.4%、12.5%和 4.3%。通过时间分辨光致发光 (PL) 和瞬态电致发光 (EL) 衰减发现，通过引入 LZO 可以显著减少 ETL 和发射层之间界面处的激子损耗。
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