Jayabharathi Jayaraman, Panimozhi Sekar, Thanikachalam Venugopal, Prabhakaran Annadurai, Jeeva Palanivel
Department of Chemistry, Annamalai University Annamalainagar 608 002 Tamilnadu India
RSC Adv. 2018 Feb 22;8(15):8402-8411. doi: 10.1039/c8ra00259b. eCollection 2018 Feb 19.
We have fabricated stable efficient iridium(iii)-bis-5-(1-(naphthalene-1-yl)-1-phenanthro[9,10-]imidazole-2-yl) benzene-1,2,3-triol (acetylacetonate) [Ir(NPIBT) (acac)] doped inverted bottom-emissive green organic light-emitting diodes using Ti-doped ZrO nanomaterials as the electron injection layer. The current density () and luminance () of the fabricated devices with Ti-doped ZrO deposited between an indium tin oxide cathode and an Ir(NPIBT) (acac) emissive layer increased significantly at a low driving voltage (V) compared with control devices without Ti-doped ZrO. The Ti-doped ZrO layer can facilitate the electron injection effectively and enhances the current efficiency ( ) of 2.84 cd A and power efficiency ( ) of 1.32 lm W.
我们使用掺钛的ZrO纳米材料作为电子注入层,制备了稳定高效的铱(III)-双-5-(1-(萘-1-基)-1-菲并[9,10-]咪唑-2-基)苯-1,2,3-三醇(乙酰丙酮)[Ir(NPIBT)(acac)]掺杂的倒置底部发射绿色有机发光二极管。与没有掺钛ZrO的对照器件相比,在铟锡氧化物阴极和Ir(NPIBT)(acac)发射层之间沉积了掺钛ZrO的制造器件的电流密度()和亮度()在低驱动电压(V)下显著增加。掺钛ZrO层可以有效地促进电子注入,并提高2.84 cd/A的电流效率()和1.32 lm/W的功率效率()。