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通过对p型砷化镓进行电化学蚀刻形成的纳米多孔层的化学成分

Chemical Composition of Nanoporous Layer Formed by Electrochemical Etching of p-Type GaAs.

作者信息

Bioud Youcef A, Boucherif Abderraouf, Belarouci Ali, Paradis Etienne, Drouin Dominique, Arès Richard

机构信息

Laboratoire Nanotechnologies Nanosystèmes (LN2)-CNRS UMI-3463, Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke, 3000 Boulevard Université, Sherbrooke, J1K OA5, Québec, Canada.

出版信息

Nanoscale Res Lett. 2016 Dec;11(1):446. doi: 10.1186/s11671-016-1642-z. Epub 2016 Oct 4.

DOI:10.1186/s11671-016-1642-z
PMID:27704487
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5050177/
Abstract

We have performed a detailed characterization study of electrochemically etched p-type GaAs in a hydrofluoric acid-based electrolyte. The samples were investigated and characterized through cathodoluminescence (CL), X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDX), and X-ray photoelectron spectroscopy (XPS). It was found that after electrochemical etching, the porous layer showed a major decrease in the CL intensity and a change in chemical composition and in the crystalline phase. Contrary to previous reports on p-GaAs porosification, which stated that the formed layer is composed of porous GaAs, we report evidence that the porous layer is in fact mainly constituted of porous AsO. Finally, a qualitative model is proposed to explain the porous AsO layer formation on p-GaAs substrate.

摘要

我们对基于氢氟酸的电解液中电化学蚀刻的p型砷化镓进行了详细的特性研究。通过阴极发光（CL）、X射线衍射（XRD）、能量色散X射线光谱（EDX）和X射线光电子能谱（XPS）对样品进行了研究和表征。结果发现，电化学蚀刻后，多孔层的阴极发光强度大幅下降，化学成分和晶相发生了变化。与之前关于p型砷化镓多孔化的报道相反，之前的报道称形成的层由多孔砷化镓组成，而我们报告的证据表明，多孔层实际上主要由多孔AsO构成。最后，提出了一个定性模型来解释p型砷化镓衬底上多孔AsO层的形成。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f6ca/5050177/a756f1f2e733/11671_2016_1642_Fig9_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f6ca/5050177/e3aca04afa71/11671_2016_1642_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f6ca/5050177/b57ccc105592/11671_2016_1642_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f6ca/5050177/52dadee7b610/11671_2016_1642_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f6ca/5050177/6eef55c6d804/11671_2016_1642_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f6ca/5050177/12ccf7d54786/11671_2016_1642_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f6ca/5050177/7dbf8e28de3a/11671_2016_1642_Fig6_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f6ca/5050177/9365adfbdcf1/11671_2016_1642_Fig7_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f6ca/5050177/c0c34d6fa6a5/11671_2016_1642_Fig8_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f6ca/5050177/a756f1f2e733/11671_2016_1642_Fig9_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f6ca/5050177/e3aca04afa71/11671_2016_1642_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f6ca/5050177/b57ccc105592/11671_2016_1642_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f6ca/5050177/52dadee7b610/11671_2016_1642_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f6ca/5050177/6eef55c6d804/11671_2016_1642_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f6ca/5050177/12ccf7d54786/11671_2016_1642_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f6ca/5050177/7dbf8e28de3a/11671_2016_1642_Fig6_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f6ca/5050177/9365adfbdcf1/11671_2016_1642_Fig7_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f6ca/5050177/c0c34d6fa6a5/11671_2016_1642_Fig8_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f6ca/5050177/a756f1f2e733/11671_2016_1642_Fig9_HTML.jpg

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