Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT) , D-76344 Eggenstein-Leopoldshafen, Hermann-von-Helmholtz Platz 1, Germany.
KIT-TUD Joint Research Laboratory Nanomaterials, Institute of Materials Science, Technical University of Darmstadt (TUD) , D-64287 Darmstadt, Jovanka-Bontschits-Straße 2, Germany.
ACS Appl Mater Interfaces. 2016 Nov 23;8(46):31757-31763. doi: 10.1021/acsami.6b10939. Epub 2016 Nov 10.
Printable, physical, and air-stable composite solid polymer electrolytes (CSPEs) with high ionic conductivity have been established as a suitable alternative to standard dielectric gate insulators for printed field-effect transistors (FETs) and logics. We have performed a stress and temperature stability study involving several CSPEs. Mechanical tensile and shear tests have been performed to determine the physical condition of CSPEs. A comprehensive temperature dependent study has been conducted within the working temperature range which electric double layer (EDL) capacitors or CSPE-gated FETs may typically experience during their lifetime. Moreover, calorimetric measurements have been performed to investigate the CSPEs stability, especially at low temperatures. Mechanical characterizations have shown tensile strength and shear modulus of the material that is typical for solid polymer electrolytes while DSC measurements show no change in the physical state within the measured temperature range. An expected increase in ionic conductivity of the CSPEs of nearly 1 order of magnitude has been observed with an increase in temperature, while an anomalous positive temperature relationship to EDL capacitance has also been noticed. Interestingly, the transistor performance characteristics, namely, on-current and threshold voltage, are found to be quite independent of the temperature, thus ensuring a large and stable operation temperature window for CSPE-gated FETs. The other parameters, subthreshold slope and the device mobility, have varied following the classical semiconductor behavior. In fact, the present study not only provides a detailed understanding of temperature dependence of the CSPE-gated FETs but also offers an insight into the physical and electrical properties of the CSPEs itself. Therefore, these results may very well help to comprehend and improve EDL capacitors, supercapacitors, and other devices that use CSPEs as the active material.
已建立具有高离子电导率的可打印、物理和空气稳定的复合固态聚合物电解质 (CSPE),以替代标准介电栅绝缘体,用于印刷场效应晶体管 (FET) 和逻辑。我们对几种 CSPE 进行了应力和温度稳定性研究。进行了机械拉伸和剪切测试,以确定 CSPE 的物理状态。在 EDL 电容器或 CSPE 门控 FET 在其使用寿命期间可能经历的工作温度范围内进行了全面的温度相关研究。此外,还进行了量热测量以研究 CSPE 的稳定性,特别是在低温下。机械特性表明,该材料具有典型的固态聚合物电解质的拉伸强度和剪切模量,而 DSC 测量表明在测量的温度范围内物理状态没有变化。随着温度的升高,CSPE 的离子电导率预计会增加近 1 个数量级,而 EDL 电容与温度的正相关关系也引起了注意。有趣的是,晶体管性能特性,即导通电流和阈值电压,被发现与温度相当独立,从而确保 CSPE 门控 FET 具有较大且稳定的工作温度窗口。其他参数,亚阈值斜率和器件迁移率,遵循经典半导体行为而变化。事实上,本研究不仅提供了对 CSPE 门控 FET 温度依赖性的详细了解,而且还深入了解了 CSPE 本身的物理和电气特性。因此,这些结果可能有助于理解和改进使用 CSPE 作为活性材料的 EDL 电容器、超级电容器和其他器件。