Black Phosphorus N-Type Field-Effect Transistor with Ultrahigh Electron Mobility via Aluminum Adatoms Doping.

High-performance black phosphorus n-type field-effect transistors are realized using Al adatoms as effective electron donors, which achieved a record high mobility of >1495 cm V s at 260 K. The electron mobility is corroborated to charged-impurity scattering at low temperature, whilst metallic-like conduction is observed at high gate bias with increased carrier density due to enhanced electron-phonon interactions at high temperature.