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氧示踪剂沿纳米尺度的氧化钪/钇稳定氧化锆(YSZ)多层膜的扩散:关于应变的影响。

O-tracer diffusion along nanoscaled ScO/yttria stabilized zirconia (YSZ) multilayers: on the influence of strain.

作者信息

Aydin Halit, Korte Carsten, Janek Jürgen

机构信息

Physikalisch-Chemisches Institut, Justus-Liebig Universität Giessen, D-35390 Giessen, Germany.

Institut für Energie und Klimaforschung (IEK-3: Brennstoffzellen), Forschungszentrum Jülich, D-52428 Jülich, Germany.

出版信息

Sci Technol Adv Mater. 2013 Jun 6;14(3):035007. doi: 10.1088/1468-6996/14/3/035007. eCollection 2013 Jun.

DOI:10.1088/1468-6996/14/3/035007
PMID:27877580
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5090511/
Abstract

The oxygen tracer diffusion coefficient describing transport along nano-/microscaled YSZ/ScO multilayers as a function of the thick-ness of the ion-conducting YSZ layers has been measured by isotope exchange depth profiling (IEDP), using secondary ion mass spec-trometry (SIMS). The multilayer samples were prepared by pulsed laser deposition (PLD) on (0001) AlO single crystalline substrates. The values for the oxygen tracer diffusion coefficient were analyzed as a combination of contributions from bulk and interface contributions and compared with results from YSZ/YO-multilayers with similar microstructure. Using the Nernst-Einstein equation as the relation between diffusivity and electrical conductivity we find very good agreement between conductivity and diffusion data, and we exclude substantial electronic conductivity in the multilayers. The effect of hetero-interface transport can be well explained by a simple interface strain model. As the multilayer samples consist of columnar film crystallites with a defined inter-face structure and texture, we also discuss the influence of this particular microstructure on the interfacial strain.

摘要

通过使用二次离子质谱法(SIMS)的同位素交换深度剖析(IEDP),测量了描述沿纳米/微米尺度的YSZ/ScO多层膜传输的氧示踪剂扩散系数,该系数是离子导电YSZ层厚度的函数。多层样品通过脉冲激光沉积(PLD)制备在(0001)AlO单晶衬底上。将氧示踪剂扩散系数的值作为体相贡献和界面贡献的组合进行分析,并与具有相似微观结构的YSZ/YO多层膜的结果进行比较。使用能斯特-爱因斯坦方程作为扩散率与电导率之间的关系,我们发现电导率和扩散数据之间非常吻合,并且排除了多层膜中的大量电子传导。异质界面传输的影响可以通过一个简单的界面应变模型得到很好的解释。由于多层样品由具有确定界面结构和织构的柱状薄膜微晶组成,我们还讨论了这种特殊微观结构对界面应变的影响。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3b92/5090511/5bbf8d84e10f/TSTA11661372F09.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3b92/5090511/b139e59ae4c5/TSTA11661372F01.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3b92/5090511/6746b9e07f74/TSTA11661372F02.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3b92/5090511/15e5179b46ea/TSTA11661372F03.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3b92/5090511/dd4da0595d96/TSTA11661372F04.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3b92/5090511/c26af7a7a867/TSTA11661372F05.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3b92/5090511/1a5d8a8f538b/TSTA11661372F06.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3b92/5090511/714a01ff090e/TSTA11661372F07.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3b92/5090511/3f34eb551eb8/TSTA11661372F08.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3b92/5090511/5bbf8d84e10f/TSTA11661372F09.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3b92/5090511/b139e59ae4c5/TSTA11661372F01.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3b92/5090511/6746b9e07f74/TSTA11661372F02.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3b92/5090511/15e5179b46ea/TSTA11661372F03.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3b92/5090511/dd4da0595d96/TSTA11661372F04.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3b92/5090511/c26af7a7a867/TSTA11661372F05.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3b92/5090511/1a5d8a8f538b/TSTA11661372F06.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3b92/5090511/714a01ff090e/TSTA11661372F07.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3b92/5090511/3f34eb551eb8/TSTA11661372F08.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3b92/5090511/5bbf8d84e10f/TSTA11661372F09.jpg

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