Kanazawa Ken, Yoshida Shoji, Shigekawa Hidemi, Kuroda Shinji
Faculty of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8573, Japan.
Sci Technol Adv Mater. 2015 Jan 13;16(1):015002. doi: 10.1088/1468-6996/16/1/015002. eCollection 2015 Feb.
The reconstructed surface structure of the II-VI semiconductor ZnTe (110), which is a promising material in the research field of semiconductor spintronics, was studied by scanning tunneling microscopy/spectroscopy (STM/STS). First, the surface states formed by reconstruction by the charge transfer of dangling bond electrons from cationic Zn to anionic Te atoms, which are similar to those of IV and III-V semiconductors, were confirmed in real space. Secondly, oscillation in tunneling current between binary states, which is considered to reflect a conformational change in the topmost Zn-Te structure between the reconstructed and bulk-like ideal structures, was directly observed by STM. Third, using the technique of charge injection, a surface atomic structure was successfully fabricated, suggesting the possibility of atomic-scale manipulation of this widely applicable surface of ZnTe.
通过扫描隧道显微镜/能谱（STM/STS）研究了II-VI族半导体ZnTe（110）的重构表面结构，ZnTe（110）是半导体自旋电子学研究领域中一种很有前景的材料。首先，在实空间中证实了由阳离子Zn的悬空键电子向阴离子Te原子电荷转移重构形成的表面态，这与IV族和III-V族半导体的表面态类似。其次，STM直接观察到了二元态之间隧道电流的振荡，这被认为反映了重构结构和块状理想结构之间最顶层Zn-Te结构的构象变化。第三，利用电荷注入技术成功制备了表面原子结构，这表明对这种广泛应用的ZnTe表面进行原子尺度操纵是可能的。
