Shafie Suhaidi, Kawahito Shoji, Itoh Shinya
Graduate School of Electronic Science and Technology, Shizuoka University, 3-5-1 Johoku, Nakaku, Hamamatsu 432-8011, Japan.
Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Nakaku, Hamamatsu 432-8011, Japan.
Sensors (Basel). 2008 Mar 18;8(3):1915-1926. doi: 10.3390/s8031915.
A dynamic range expansion technique for CMOS image sensors with dual charge storage in a pixel and multiple sampling technique is presented. Each pixel contains a photodiode and a storage diode which is connected to the photodiode via a separation gate. The sensitivity of the signal charge in the storage diode can be controlled either by a separation gate which limits the charge to flow into the storage diode or by controlling the accumulation time in the storage diode. The operation of the sensitivity control with separation gate techniques is simulated and it is found that a blocking layer to the storage diode plays an important role for high controllability of sensitivity of the storage diode. A prototype chip for testing multiple short time accumulations is fabricated and measured.
提出了一种用于CMOS图像传感器的动态范围扩展技术,该技术采用像素中的双电荷存储和多重采样技术。每个像素包含一个光电二极管和一个存储二极管,存储二极管通过一个隔离栅与光电二极管相连。存储二极管中信号电荷的灵敏度可以通过限制电荷流入存储二极管的隔离栅来控制,也可以通过控制存储二极管中的积累时间来控制。对采用隔离栅技术的灵敏度控制操作进行了模拟,发现存储二极管的阻挡层对于存储二极管灵敏度的高可控性起着重要作用。制作并测量了用于测试多重短时间积累的原型芯片。