• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利:CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验

一种用于CMOS图像传感器的动态范围扩展技术,该技术在像素中具有双电荷存储和多次采样。

A Dynamic Range Expansion Technique for CMOS Image Sensors with Dual Charge Storage in a Pixel and Multiple Sampling.

作者信息

Shafie Suhaidi, Kawahito Shoji, Itoh Shinya

机构信息

Graduate School of Electronic Science and Technology, Shizuoka University, 3-5-1 Johoku, Nakaku, Hamamatsu 432-8011, Japan.

Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Nakaku, Hamamatsu 432-8011, Japan.

出版信息

Sensors (Basel). 2008 Mar 18;8(3):1915-1926. doi: 10.3390/s8031915.

DOI:10.3390/s8031915
PMID:27879802
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC3663033/
Abstract

A dynamic range expansion technique for CMOS image sensors with dual charge storage in a pixel and multiple sampling technique is presented. Each pixel contains a photodiode and a storage diode which is connected to the photodiode via a separation gate. The sensitivity of the signal charge in the storage diode can be controlled either by a separation gate which limits the charge to flow into the storage diode or by controlling the accumulation time in the storage diode. The operation of the sensitivity control with separation gate techniques is simulated and it is found that a blocking layer to the storage diode plays an important role for high controllability of sensitivity of the storage diode. A prototype chip for testing multiple short time accumulations is fabricated and measured.

摘要

提出了一种用于CMOS图像传感器的动态范围扩展技术,该技术采用像素中的双电荷存储和多重采样技术。每个像素包含一个光电二极管和一个存储二极管,存储二极管通过一个隔离栅与光电二极管相连。存储二极管中信号电荷的灵敏度可以通过限制电荷流入存储二极管的隔离栅来控制,也可以通过控制存储二极管中的积累时间来控制。对采用隔离栅技术的灵敏度控制操作进行了模拟,发现存储二极管的阻挡层对于存储二极管灵敏度的高可控性起着重要作用。制作并测量了用于测试多重短时间积累的原型芯片。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8c84/3663033/62fbee0b665a/sensors-08-01915f14.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8c84/3663033/9f4968c264ec/sensors-08-01915f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8c84/3663033/40a3bd8dd335/sensors-08-01915f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8c84/3663033/70901f2c9f7a/sensors-08-01915f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8c84/3663033/e487e061dc42/sensors-08-01915f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8c84/3663033/750412e99638/sensors-08-01915f5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8c84/3663033/9576a7cca59b/sensors-08-01915f6.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8c84/3663033/2d12acecbde8/sensors-08-01915f7.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8c84/3663033/55cd526212fb/sensors-08-01915f8.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8c84/3663033/aa1ca44b88ff/sensors-08-01915f9.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8c84/3663033/8fbe363a3d1c/sensors-08-01915f10.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8c84/3663033/3048568490be/sensors-08-01915f11.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8c84/3663033/bd8d33828b5d/sensors-08-01915f12.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8c84/3663033/59f6687455c1/sensors-08-01915f13.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8c84/3663033/62fbee0b665a/sensors-08-01915f14.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8c84/3663033/9f4968c264ec/sensors-08-01915f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8c84/3663033/40a3bd8dd335/sensors-08-01915f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8c84/3663033/70901f2c9f7a/sensors-08-01915f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8c84/3663033/e487e061dc42/sensors-08-01915f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8c84/3663033/750412e99638/sensors-08-01915f5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8c84/3663033/9576a7cca59b/sensors-08-01915f6.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8c84/3663033/2d12acecbde8/sensors-08-01915f7.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8c84/3663033/55cd526212fb/sensors-08-01915f8.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8c84/3663033/aa1ca44b88ff/sensors-08-01915f9.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8c84/3663033/8fbe363a3d1c/sensors-08-01915f10.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8c84/3663033/3048568490be/sensors-08-01915f11.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8c84/3663033/bd8d33828b5d/sensors-08-01915f12.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8c84/3663033/59f6687455c1/sensors-08-01915f13.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8c84/3663033/62fbee0b665a/sensors-08-01915f14.jpg

相似文献

1
A Dynamic Range Expansion Technique for CMOS Image Sensors with Dual Charge Storage in a Pixel and Multiple Sampling.一种用于CMOS图像传感器的动态范围扩展技术,该技术在像素中具有双电荷存储和多次采样。
Sensors (Basel). 2008 Mar 18;8(3):1915-1926. doi: 10.3390/s8031915.
2
A Wide Dynamic Range CMOS Image Sensor with a Charge Splitting Gate and Two Storage Diodes.一种具有电荷分裂栅极和两个存储二极管的宽动态范围互补金属氧化物半导体图像传感器。
Sensors (Basel). 2019 Jun 30;19(13):2904. doi: 10.3390/s19132904.
3
A 75-ps Gated CMOS Image Sensor with Low Parasitic Light Sensitivity.一款具有低寄生光灵敏度的75皮秒门控CMOS图像传感器。
Sensors (Basel). 2016 Jun 29;16(7):999. doi: 10.3390/s16070999.
4
A 7 ke-SD-FWC 1.2 e-RMS Temporal Random Noise 128×256 Time-Resolved CMOS Image Sensor With Two In-Pixel SDs for Biomedical Applications.用于生物医学应用的具有两个像素内 SD 的 7 位 SD-FWC 1.2e-RMS 时滞随机噪声 128×256 时间分辨 CMOS 图像传感器。
IEEE Trans Biomed Circuits Syst. 2017 Dec;11(6):1335-1343. doi: 10.1109/TBCAS.2017.2738322. Epub 2017 Sep 21.
5
An Over 90 dB Intra-Scene Single-Exposure Dynamic Range CMOS Image Sensor Using a 3.0 μm Triple-Gain Pixel Fabricated in a Standard BSI Process.一种采用标准背照式工艺制造的3.0μm三增益像素的90dB以上场景内单曝光动态范围CMOS图像传感器。
Sensors (Basel). 2018 Jan 12;18(1):203. doi: 10.3390/s18010203.
6
A High Full Well Capacity CMOS Image Sensor for Space Applications.用于空间应用的高满阱容量 CMOS 图像传感器。
Sensors (Basel). 2019 Mar 28;19(7):1505. doi: 10.3390/s19071505.
7
A Pixel Design of a Branching Ultra-Highspeed Image Sensor.一种分支超高速图像传感器的像素设计。
Sensors (Basel). 2021 Apr 3;21(7):2506. doi: 10.3390/s21072506.
8
Temporal Noise Analysis of Charge-Domain Sampling Readout Circuits for CMOS Image Sensors.用于CMOS图像传感器的电荷域采样读出电路的时间噪声分析
Sensors (Basel). 2018 Feb 27;18(3):707. doi: 10.3390/s18030707.
9
Simulations and Design of a Single-Photon CMOS Imaging Pixel Using Multiple Non-Destructive Signal Sampling.基于多次非破坏性信号采样的单光子CMOS成像像素的仿真与设计
Sensors (Basel). 2020 Apr 4;20(7):2031. doi: 10.3390/s20072031.
10
Fully Depleted, Trench-Pinned Photo Gate for CMOS Image Sensor Applications.用于CMOS图像传感器应用的全耗尽型沟槽钉扎光电门
Sensors (Basel). 2020 Jan 28;20(3):727. doi: 10.3390/s20030727.

引用本文的文献

1
Silicon Nanowire Phototransistor Arrays for CMOS Image Sensor Applications.用于CMOS图像传感器应用的硅纳米线光电晶体管阵列
Sensors (Basel). 2023 Dec 14;23(24):9824. doi: 10.3390/s23249824.
2
A Wide Dynamic Range CMOS Image Sensor with a Charge Splitting Gate and Two Storage Diodes.一种具有电荷分裂栅极和两个存储二极管的宽动态范围互补金属氧化物半导体图像传感器。
Sensors (Basel). 2019 Jun 30;19(13):2904. doi: 10.3390/s19132904.
3
Stereo Vision-Based High Dynamic Range Imaging Using Differently-Exposed Image Pair.基于立体视觉的使用不同曝光图像对的高动态范围成像
Sensors (Basel). 2017 Jun 22;17(7):1473. doi: 10.3390/s17071473.
4
A new human perception-based over-exposure detection method for color images.一种基于人类感知的彩色图像过度曝光检测新方法。
Sensors (Basel). 2014 Sep 15;14(9):17159-73. doi: 10.3390/s140917159.