Institute of Optoelectronics and Nanomaterials, Herbert Gleiter Institute of Nanoscience, MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China.
Adv Mater. 2017 Feb;29(5). doi: 10.1002/adma.201603885. Epub 2016 Nov 24.
Solution-processed CsPbBr quantum-dot light-emitting diodes with a 50-fold external quantum efficiency improvement (up to 6.27%) are achieved through balancing surface passivation and carrier injection via ligand density control (treating with hexane/ethyl acetate mixed solvent), which induces the coexistence of high levels of ink stability, photoluminescence quantum yields, thin-film uniformity, and carrier-injection efficiency.
通过控制配体密度（用正己烷/乙酸乙酯混合溶剂处理）来实现表面钝化和载流子注入的平衡，从而获得了外量子效率提高 50 倍（高达 6.27%）的溶液处理的 CsPbBr 量子点发光二极管，这使得油墨稳定性、光致发光量子产率、薄膜均匀性和载流子注入效率都得到了提高。
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