Pattengale Brian, Huang Jier
Department of Chemistry, Marquette University, Milwaukee, Wisconsin 53201, USA.
Phys Chem Chem Phys. 2016 Dec 7;18(48):32820-32825. doi: 10.1039/c6cp06407h.
Doping with electron-rich elements in BiVO photoanodes has been demonstrated as a desirable approach for improving their carrier mobility and charge separation efficiency. However, the effect of doping and dopant concentration on the carrier dynamics and photoelectrochemical performance remains unclear. In this work, we examined the effects of Mo doping on the charge separation dynamics and photocurrent performance in BiVO photoanodes. We show that the photocurrent of BiVO photoanodes increases with increasing concentration of the Mo dopant, which can be attributed to both the improved carrier mobility resulting from increased electron density and charge separation efficiency due to the diminishing of trap states upon Mo doping. The effect of doping on the electronic structure, carrier dynamics and photocurrent performance of BiVO photoanodes resulting from W and Mo dopants was also compared and discussed in this study. The knowledge gained from this work will provide important insights into the optimization of the carrier mobility and charge separation efficiency of BiVO photoanodes by controlling the dopants and their concentrations.
在BiVO光阳极中掺杂富电子元素已被证明是提高其载流子迁移率和电荷分离效率的一种理想方法。然而，掺杂和掺杂剂浓度对载流子动力学和光电化学性能的影响仍不清楚。在这项工作中，我们研究了Mo掺杂对BiVO光阳极中电荷分离动力学和光电流性能的影响。我们表明，BiVO光阳极的光电流随着Mo掺杂剂浓度的增加而增加，这既可以归因于由于电子密度增加导致的载流子迁移率提高，也可以归因于Mo掺杂后陷阱态减少导致的电荷分离效率提高。本研究还比较和讨论了W和Mo掺杂剂对BiVO光阳极的电子结构、载流子动力学和光电流性能的影响。从这项工作中获得的知识将为通过控制掺杂剂及其浓度来优化BiVO光阳极的载流子迁移率和电荷分离效率提供重要的见解。
