Department of Physics, Wake Forest University, Winston Salem, NC 27109, USA.
Department of Chemistry, Wake Forest University, Winston Salem, NC 27109, USA.
Sci Rep. 2016 Nov 29;6:38092. doi: 10.1038/srep38092.
We report on the synthesis and electrical properties of nine new alkylated silane self-assembled monolayers (SAMs) - (EtO)Si(CH)N = CHPhX where n = 3 or 11 and X = 4-CF 3,5-CF, 3-F-4-CF, 4-F, or 2,3,4,5,6-F, and explore their rectification behavior in relation to their molecular structure. The electrical properties of the films were examined in a metal/insulator/metal configuration, with a highly-doped silicon bottom contact and a eutectic gallium-indium liquid metal (EGaIn) top contact. The junctions exhibit high yields (>90%), a remarkable resistance to bias stress, and current rectification ratios (R) between 20 and 200 depending on the structure, degree of order, and internal dipole of each molecule. We found that the rectification ratio correlates positively with the strength of the molecular dipole moment and it is reduced with increasing molecular length.
我们报告了九种新型烷基硅烷自组装单分子层（SAMs）-（EtO）Si（CH）N ═ CHPhX 的合成和电学性质，其中 n ═ 3 或 11，X ═ 4-CF 3 、5-CF 、3-F-4-CF 、4-F 或 2,3,4,5,6-F，并研究了它们的整流行为与分子结构的关系。使用具有高掺杂硅底层接触和共晶镓-铟液态金属（EGaIn）顶层接触的金属/绝缘体/金属配置来检查薄膜的电学性能。结具有高产量（>90%）、对偏置应力的显著抗性以及取决于每个分子的结构、有序程度和内部偶极矩的电流整流比（R）在 20 到 200 之间。我们发现，整流比与分子偶极矩的强度呈正相关，并且随着分子长度的增加而减小。
