Amri Emna, Boso Gianluca, Korzh Boris, Zbinden Hugo
Opt Lett. 2016 Dec 15;41(24):5728-5731. doi: 10.1364/OL.41.005728.
Negative-feedback avalanche diodes (NFADs) provide a practical solution for different single-photon counting applications requiring free-running mode operation with low afterpulsing probability. Unfortunately, the timing jitter has never been as good as for gated InGaAs/InP single-photon avalanche diodes. Here we report on the timing jitter characterization of InGaAs/InP based NFADs with particular focus on the temperature dependence and the effect of carrier transport between the absorption and multiplication regions. Values as low as 52 ps full-width at half-maximum were obtained at an excess bias voltage of 3.5 V and an operating temperature of around -100°C.
负反馈雪崩二极管(NFADs)为不同的单光子计数应用提供了一种切实可行的解决方案,这些应用需要在低后脉冲概率下进行自由运行模式操作。不幸的是,其定时抖动从未像门控铟镓砷/磷化铟单光子雪崩二极管那样好。在此,我们报告基于铟镓砷/磷化铟的NFADs的定时抖动特性,特别关注温度依赖性以及吸收区和倍增区之间载流子输运的影响。在3.5 V的过偏置电压和约-100°C的工作温度下,获得了低至半高全宽52 ps的值。