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砷化镓、铟镓砷及其硒化锌核壳胶体量子点的制备。

Fabrication of GaAs, InGaAs and Their ZnSe Core/Shell Colloidal Quantum Dots.

机构信息

Department of Molecular Science and Technology, Ajou University , Suwon 443-749, Korea.

Department of Energy & Materials Engineering, Dongguk University Seoul 100-715, Korea.

出版信息

J Am Chem Soc. 2016 Dec 28;138(51):16568-16571. doi: 10.1021/jacs.6b08679. Epub 2016 Dec 19.

DOI:10.1021/jacs.6b08679
PMID:27976877
Abstract

We first report the GaAs/ZnSe and InGaAs/ZnSe core/shell structured colloidal quantum dots (CQDs). GaAs based CQD, which are hard to obtain by the chemical synthetic method, can be prepared successfully using the acetylacetonate complex of indium and gallium as cationic precursors. We control the indium contents, and the photoluminescence emission is tuned from orange to deep red. InGaAs/ZnSe core/shell QDs show the best quantum yield of 25.6%. A ZnSe outer shell protects the core and improves quantum yield, and it shows a large red shift owing to the quasi-type-I band structure.

摘要

我们首次报告了 GaAs/ZnSe 和 InGaAs/ZnSe 核/壳结构胶体量子点(CQDs)。使用铟和镓的乙酰丙酮配合物作为阳离子前体制备了难以通过化学合成法获得的基于 GaAs 的 CQD。我们控制了铟的含量,使光致发光发射从橙色调谐到深红色。InGaAs/ZnSe 核/壳 QD 的量子产率高达 25.6%。ZnSe 外壳保护了核并提高了量子产率,由于准 I 型能带结构,它显示出较大的红移。

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