School of Electronic and Electrical Engineering and Sungkyunkwan University Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon 16419, Korea.
Nanotechnology. 2017 Feb 17;28(7):075201. doi: 10.1088/1361-6528/aa53fa. Epub 2016 Dec 15.
We investigate the hopping conduction and random telegraph signal caused by various species of interface charge scatterers in a MoS multilayer field-effect transistor. The temperature dependence of the channel resistivity shows that at low temperatures and low carrier densities the carrier transport is via Mott variable range hopping with a hopping length changing from 41 to 80 nm. The hopping conduction was due to electron tunneling through localized band tail states formed by the scatterers located in the vicinity of the MoS layer. In the temperature range of 40-70 K, we observed random telegraph signal (RTS) that is caused by the capture and emission of a carrier by the interface traps that are located away from the layer. These traps form strong potential that interact with the layer and change the potential profile of the electron system. The characteristics of RTS depend strongly on gate bias and temperature, as well as the application of a magnetic field.
我们研究了在 MoS 多层场效应晶体管中各种界面电荷散射体引起的跳跃传导和随机电报信号。沟道电阻率的温度依赖性表明，在低温和低载流子密度下，载流子输运是通过莫特变程跳跃进行的，跳跃长度从 41nm 变化到 80nm。跳跃传导是由于电子通过由位于 MoS 层附近的散射体形成的局部能带尾部状态的隧道跃迁引起的。在 40-70K 的温度范围内，我们观察到随机电报信号（RTS），这是由位于远离层的界面陷阱捕获和释放载流子引起的。这些陷阱形成了与层相互作用并改变电子系统势分布的强势。RTS 的特性强烈依赖于栅极偏压和温度，以及磁场的应用。
