Two-dimensional WS nanoribbon deposition by conversion of pre-patterned amorphous silicon.

We present a method for area selective deposition of 2D WS nanoribbons with tunable thickness on a dielectric substrate. The process is based on a complete conversion of a pre-patterned, H-terminated Si layer to metallic W by WF, followed by in situ sulfidation by HS. The reaction process, performed at 450 °C, yields nanoribbons with lateral dimension down to 20 nm and with random basal plane orientation. The thickness of the nanoribbons is accurately controlled by the thickness of the pre-deposited Si layer. Upon rapid thermal annealing at 900 °C under inert gas, the WS basal planes align parallel to the substrate.