Department of Applied Physics, Eindhoven University of Technology , P.O. Box 513, 5600 MB Eindhoven, The Netherlands.
TNO-Holst Centre , High Tech Campus 31, 5656 AE Eindhoven, The Netherlands.
ACS Nano. 2017 Sep 26;11(9):9303-9311. doi: 10.1021/acsnano.7b04701. Epub 2017 Sep 7.
Area-selective atomic layer deposition (ALD) is rapidly gaining interest because of its potential application in self-aligned fabrication schemes for next-generation nanoelectronics. Here, we introduce an approach for area-selective ALD that relies on the use of chemoselective inhibitor molecules in a three-step (ABC-type) ALD cycle. A process for area-selective ALD of SiO was developed comprising acetylacetone inhibitor (step A), bis(diethylamino)silane precursor (step B), and O plasma reactant (step C) pulses. Our results show that this process allows for selective deposition of SiO on GeO, SiN, SiO, and WO, in the presence of AlO, TiO, and HfO surfaces. In situ Fourier transform infrared spectroscopy experiments and density functional theory calculations underline that the selectivity of the approach stems from the chemoselective adsorption of the inhibitor. The selectivity between different oxide starting surfaces and the compatibility with plasma-assisted or ozone-based ALD are distinct features of this approach. Furthermore, the approach offers the opportunity of tuning the substrate-selectivity by proper selection of inhibitor molecules.
区域选择性原子层沉积（ALD）因其在下一代纳米电子学中自对准制造方案的潜在应用而受到广泛关注。在这里，我们介绍了一种基于三步（ABC 型）ALD 循环中使用化学选择性抑制剂分子的区域选择性 ALD 方法。我们开发了一种用于 SiO 的区域选择性 ALD 工艺，该工艺包括乙酰丙酮抑制剂（步骤 A）、双（二乙氨基）硅烷前体（步骤 B）和 O 等离子体反应物（步骤 C）脉冲。我们的结果表明，在 AlO、TiO 和 HfO 表面存在的情况下，该工艺允许 SiO 在 GeO、SiN、SiO 和 WO 上选择性沉积。原位傅里叶变换红外光谱实验和密度泛函理论计算表明，该方法的选择性源于抑制剂的化学选择性吸附。这种方法的特点是不同氧化物起始表面之间的选择性和与等离子体辅助或基于臭氧的 ALD 的兼容性。此外，该方法通过适当选择抑制剂分子为调整衬底选择性提供了机会。
