KAIST Institute for Nanocentury (KINC) and Department of Chemical and Biomolecular Engineering (BK-21 Plus), Korea Advanced Institute of Science and Technology , 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Korea.
Advanced Functional Materials Group, Korea Research Institute of Chemical Technology , Daejeon 34114, Korea.
Langmuir. 2016 Dec 20;32(50):13418-13426. doi: 10.1021/acs.langmuir.6b03355. Epub 2016 Dec 5.
Controlling the organization of self-assembling building blocks over a large area is crucial for lithographic tools based on the bottom-up approach. However, the fabrication of liquid crystal (LC) defect patterns with a particular ordering still remains a challenge because of the limited close-packed morphologies of LC defects. Here, we introduce a multiple-stamping domain separation method for the control of the dimensions and organization of LC defect structures. Prepatterns with various grid shapes on planar polyimide (PI) surfaces were fabricated by pressing a line-shaped stamp into the PI surfaces in two different directions, and then these surfaces were used to prepare LC defect structures confined to these grid domains. The dimensions of the LC defect structures, namely, the equilibrium diameter and the center to center spacing, are controlled by varying the line spacing of the stamps and the film thickness. A variety of arrangements of LC defects, including square, rhombic, hexagonal, and other oblique lattices, can be obtained by simply varying the stamping angle (Ω) between the first and second stamping directions. Furthermore, we demonstrate that the resulting controllable LC defect arrays can be used as templates for generating various patterns of nanoparticle clusters by trapping quantum dots (QDs) within the cores of the LC defects.
控制自组装构建块在大面积上的组织对于基于自下而上方法的光刻工具至关重要。然而,由于 LC 缺陷的有限紧密堆积形态,具有特定有序性的 LC 缺陷图案的制造仍然是一个挑战。在这里,我们引入了一种多次压印畴分离方法来控制 LC 缺陷结构的尺寸和组织。通过将线状印章压入 PI 表面的两个不同方向,在平面聚酰亚胺 (PI) 表面上制造出具有各种网格形状的预图案,然后将这些表面用于制备限制在这些网格畴内的 LC 缺陷结构。通过改变印章的线间距和薄膜厚度,可以控制 LC 缺陷结构的尺寸,即平衡直径和中心到中心间距。通过简单地改变第一次和第二次压印方向之间的压印角(Ω),可以获得包括正方形、菱形、六边形和其他斜晶格在内的各种 LC 缺陷排列。此外,我们证明,所得可控 LC 缺陷阵列可用作通过在 LC 缺陷的核心中捕获量子点 (QD) 来产生各种纳米颗粒团簇图案的模板。