Department of Materials Science and Engineering Yonsei University, 50 Yonsei-ro, Seodaemoon-gu 03722, Korea.
Nanoscale. 2017 Jan 5;9(2):923-929. doi: 10.1039/c6nr06839a.
A semimetal to semiconductor transition in low-dimensional Bi nanowires is theoretically predicted based on the quantum confinement effect, which results in the enhancement of the thermoelectric performance. However, this transition has rarely been observed in the transport properties of gate modulation because of there being too few charge carriers induced by a typical electric field effect. In this paper, we report on our observations of the on-off state in a Bi nanowire using a polyethylene oxide/LiClO electrolyte gate, which produces a much larger effect than a back-gate. The carrier density of the surface state was found to be consistent with previously reported results. The intrinsic properties of the Bi nanowires, as obtained by temperature- and diameter-dependent gate modulations, are also discussed.
基于量子限域效应,理论上预测了低维 Bi 纳米线中的半导体-金属转变,这导致了热电器件性能的提高。然而,由于典型的电场效应引起的载流子太少,在栅极调制的输运性质中很少观察到这种转变。在本文中,我们报告了使用聚氧化乙烯/高氯酸锂电解质栅极在 Bi 纳米线中观察到的开-关状态,其效果远大于背栅。发现表面态的载流子密度与先前报道的结果一致。通过温度和直径相关的栅极调制获得的 Bi 纳米线的本征性质也进行了讨论。