Santhosh S, Mathankumar M, Selva Chandrasekaran S, Nanda Kumar A K, Murugan P, Subramanian B
CSIR-Central Electrochemical Research Institute , Karaikudi- 630 003, India.
Academy of Scientific and Innovative Research (AcSIR), Central Electrochemical Research Institute , Karaikudi 630 003, India.
Langmuir. 2017 Jan 10;33(1):19-33. doi: 10.1021/acs.langmuir.6b02940. Epub 2016 Dec 21.
Molybdenum trioxide (MoO) is a well-known electrochromic material. In the present work, n-type α-MoO thin films with both direct and indirect band gaps were fabricated by varying the laser repetition (ablation) rate in a pulsed laser deposition (PLD) system at a constant reactive O pressure. The electrochromic properties of the films are compared and correlated to the microstructure and molecular-level coordination. Mixed amorphous and textured crystallites evolve at the microstructural level. At the molecular level, using NMR and EPR, we show that the change in the repetition rate results in a variation of the molybdenum coordination with oxygen: at low repetition rates (2 Hz), the larger the octahedral coordination, and greater the texture, whereas at 10 Hz, tetrahedral coordination is significant. The anion vacancies also introduce a large density of defect states into the band gap, as evidenced by XPS studies of the valence band and supported by DFT calculations. The electrochromic contrast improved remarkably by almost 100% at higher repetition rates whereas the switching speed decreased by almost 6-fold. Although the electrochromic contrast and coloration efficiency were better at higher repetition rates, the switching speed, reversibility, and stability were better at low repetition rates. This difference in the electrochromic properties of the two MoO films is attributed to the variation in the defect and molecular coordination states of the Mo cation.
三氧化钼(MoO₃)是一种著名的电致变色材料。在本工作中,通过在脉冲激光沉积(PLD)系统中在恒定的反应性氧压力下改变激光重复(烧蚀)速率,制备了具有直接和间接带隙的n型α-MoO₃薄膜。比较了薄膜的电致变色性能,并将其与微观结构和分子水平的配位相关联。在微观结构层面,混合的非晶态和织构化微晶不断演变。在分子水平上,利用核磁共振(NMR)和电子顺磁共振(EPR),我们表明重复速率的变化导致钼与氧的配位发生变化:在低重复速率(2 Hz)下,八面体配位越大,织构越明显;而在10 Hz时,四面体配位显著。阴离子空位也在带隙中引入了大量的缺陷态,价带的X射线光电子能谱(XPS)研究证明了这一点,并得到密度泛函理论(DFT)计算的支持。在较高重复速率下,电致变色对比度显著提高了近100%,而开关速度降低了近6倍。虽然在较高重复速率下电致变色对比度和着色效率更好,但在低重复速率下开关速度、可逆性和稳定性更好。这两种MoO₃薄膜电致变色性能的差异归因于Mo阳离子的缺陷和分子配位状态的变化。