Advanced Light Source, Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States.
Nano Lett. 2017 Jan 11;17(1):78-84. doi: 10.1021/acs.nanolett.6b03362. Epub 2016 Dec 27.
We report measurements of the infrared optical response of thin black phosphorus under field-effect modulation. We interpret the observed spectral changes as a combination of an ambipolar Burstein-Moss (BM) shift of the absorption edge due to band-filling under gate control, and a quantum confined Franz-Keldysh (QCFK) effect, phenomena that have been proposed theoretically to occur for black phosphorus under an applied electric field. Distinct optical responses are observed depending on the flake thickness and starting carrier concentration. Transmission extinction modulation amplitudes of more than two percent are observed, suggesting the potential for use of black phosphorus as an active material in mid-infrared optoelectronic modulator applications.
我们报告了在电场调制下，对薄黑磷的红外光响应的测量结果。我们将观察到的光谱变化解释为由于栅极控制下的能带填充导致吸收边的双极性 Burstein-Moss（BM）位移，以及量子限制 Franz-Keldysh（QCFK）效应的组合，这些现象已被理论上提出在施加电场时会发生在黑磷中。根据薄片厚度和起始载流子浓度的不同，观察到了不同的光学响应。观察到超过 2%的透射消光调制幅度，这表明黑磷有可能作为活性材料用于中红外光电调制器应用。
