Kamil Suraya Ahmad, Chandrappan Jayakrishnan, Murray Matthew, Steenson Paul, Krauss Thomas F, Jose Gin
Opt Lett. 2016 Oct 15;41(20):4684-4687. doi: 10.1364/OL.41.004684.
An ultrafast laser plasma doping (ULPD) technique is used for high concentration doping of erbium ions into silica-on-silicon substrate. The method uses a femtosecond laser to ablate material from TeO-ZnO-NaO-ErO (Er-TZN) target glass. The laser-generated plasma modifies the silica network, producing a high-index-contrast optical layer suited to the production of on-chip integrated optical circuits. Cross-sectional analysis using scanning electron microscope with energy dispersive x-ray spectroscopy revealed homogeneous intermixing of the host silica with Er-TZN, which is unique to ULPD. The highly doped layer exhibits spectroscopic characteristics of erbium with photoluminescence lifetimes from 10.79 to 14.07 ms.
一种超快激光等离子体掺杂（ULPD）技术被用于将铒离子高浓度掺杂到硅基二氧化硅衬底中。该方法使用飞秒激光从TeO-ZnO-NaO-ErO（Er-TZN）靶玻璃中烧蚀材料。激光产生的等离子体改变了二氧化硅网络，产生了一个适合用于片上集成光学电路生产的高折射率对比度光学层。使用带有能量色散X射线光谱仪的扫描电子显微镜进行的横截面分析表明，主体二氧化硅与Er-TZN均匀混合，这是ULPD所特有的。高掺杂层表现出铒的光谱特性，光致发光寿命为10.79至14.07毫秒。
