• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利:CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验

衬底温度对硅基二氧化硅和硅基氮化硅衬底上掺杂层的形貌、结构及光学性能的影响

Effect of Substrate Temperature on Morphological, Structural, and Optical Properties of Doped Layer on SiO-on-Silicon and SiN-on-Silicon Substrate.

作者信息

Kamil Suraya Ahmad, Jose Gin

机构信息

Faculty of Applied Sciences, Universiti Teknologi MARA, Shah Alam 40450, Selangor, Malaysia.

School of Chemical and Process Engineering, University of Leeds, Leeds LS2 9JT, UK.

出版信息

Nanomaterials (Basel). 2022 Mar 10;12(6):919. doi: 10.3390/nano12060919.

DOI:10.3390/nano12060919
PMID:35335732
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC8955047/
Abstract

A high concentration of Er without clustering issues is essential in an Er-doped waveguide amplifier as it is needed to produce a high gain and low noise signal. Ultrafast laser plasma doping is a technique that facilitates the blending of femtosecond laser-produced plasma from an Er-doped TeO glass with a substrate to form a high Er concentration layer. The influence of substrate temperature on the morphological, structural, and optical properties was studied and reported in this paper. Analysis of the doped substrates using scanning electron microscopy (SEM) confirmed that temperatures up to approximately 400 °C are insufficient for the incoming plasma plume to modify the strong covalent bonds of silica (SiO), and the doping process could not take place. The higher temperature used caused the materials from Er-doped tellurite glass to diffuse deeper (except Te with smaller concentration) into silica, which created a thicker film. SEM images showed that Er-doped tellurite glass was successfully diffused in the SiN. However, the doping was not as homogeneous as in silica.

摘要

在掺铒波导放大器中,高浓度的铒且不存在团聚问题至关重要,因为产生高增益和低噪声信号需要这样的条件。超快激光等离子体掺杂是一种有助于将掺铒碲酸盐玻璃中飞秒激光产生的等离子体与衬底混合以形成高铒浓度层的技术。本文研究并报道了衬底温度对形态、结构和光学性能的影响。使用扫描电子显微镜(SEM)对掺杂衬底进行分析证实,高达约400°C的温度不足以使入射的等离子体羽流改变二氧化硅(SiO)的强共价键,掺杂过程无法发生。使用的较高温度导致掺铒碲酸盐玻璃中的物质(除了浓度较小的碲)更深地扩散到二氧化硅中,从而形成了更厚的薄膜。SEM图像显示掺铒碲酸盐玻璃成功扩散到了氮化硅中。然而,掺杂不如在二氧化硅中均匀。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c696/8955047/f3b88611577f/nanomaterials-12-00919-g008a.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c696/8955047/48838b792e59/nanomaterials-12-00919-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c696/8955047/5c085f8a1710/nanomaterials-12-00919-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c696/8955047/19b2fe97695c/nanomaterials-12-00919-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c696/8955047/0b0763989edb/nanomaterials-12-00919-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c696/8955047/f3b88611577f/nanomaterials-12-00919-g008a.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c696/8955047/48838b792e59/nanomaterials-12-00919-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c696/8955047/5c085f8a1710/nanomaterials-12-00919-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c696/8955047/19b2fe97695c/nanomaterials-12-00919-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c696/8955047/0b0763989edb/nanomaterials-12-00919-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c696/8955047/f3b88611577f/nanomaterials-12-00919-g008a.jpg

相似文献

1
Effect of Substrate Temperature on Morphological, Structural, and Optical Properties of Doped Layer on SiO-on-Silicon and SiN-on-Silicon Substrate.衬底温度对硅基二氧化硅和硅基氮化硅衬底上掺杂层的形貌、结构及光学性能的影响
Nanomaterials (Basel). 2022 Mar 10;12(6):919. doi: 10.3390/nano12060919.
2
Ultrafast laser plasma doping of Er ions in silica-on-silicon for optical waveguiding applications.用于光波导应用的硅基二氧化硅中铒离子的超快激光等离子体掺杂
Opt Lett. 2016 Oct 15;41(20):4684-4687. doi: 10.1364/OL.41.004684.
3
Target dependent femtosecond laser plasma implantation dynamics in enabling silica for high density erbium doping.基于靶材的飞秒激光等离子体注入动力学在实现二氧化硅中高密度铒掺杂方面的应用
Sci Rep. 2015 Sep 15;5:14037. doi: 10.1038/srep14037.
4
Photoluminescence properties of Er and Er/Yb doped tellurite glass and glass-ceramics containing BiTeO crystals.掺铒和铒/镱的碲酸盐玻璃以及含有碲酸铋晶体的玻璃陶瓷的光致发光特性
Dalton Trans. 2022 Mar 8;51(10):4087-4096. doi: 10.1039/d1dt04097a.
5
Gain optimization of an erbium-ytterbium co-doped amplifier via a SiN photonic platform.通过氮化硅光子平台实现铒镱共掺杂放大器的增益优化。
Opt Express. 2023 Oct 9;31(21):35419-35430. doi: 10.1364/OE.503076.
6
Super Broadband at Telecom Wavelengths From RE-Doped SiO-TaO Glass Ceramics Planar Waveguides.基于掺稀土SiO-TaO玻璃陶瓷平面波导的电信波长超宽带
Front Chem. 2022 Jul 4;10:915335. doi: 10.3389/fchem.2022.915335. eCollection 2022.
7
Broadband near-infrared emission property in Er3+/Ce3+ co-doped silica-germanate glass for fiber amplifier.用于光纤放大器的铒离子/铈离子共掺杂锗酸盐玻璃中的宽带近红外发射特性
Spectrochim Acta A Mol Biomol Spectrosc. 2014 May 21;126:53-8. doi: 10.1016/j.saa.2014.01.134. Epub 2014 Feb 12.
8
Linkage of oxygen deficiency defects and rare earth concentrations in silica glass optical fiber probed by ultraviolet absorption and laser excitation spectroscopy.通过紫外吸收和激光激发光谱法探测二氧化硅玻璃光纤中氧缺陷与稀土元素浓度的关联
Opt Express. 2012 Jun 18;20(13):14494-507. doi: 10.1364/OE.20.014494.
9
Tm Modified Optical Temperature Behavior of Transparent Er-Doped Hexagonal NaGdF Glass Ceramics.Tm 改性的掺铒透明六角形 NaGdF 玻璃陶瓷的光学温度行为
Nanoscale Res Lett. 2017 Dec;12(1):402. doi: 10.1186/s11671-017-2167-9. Epub 2017 Jun 12.
10
Toward a10 dB net-gain waveguide amplifier in an Er-Yb co-doped phosphate glass.迈向基于铒镱共掺杂磷酸盐玻璃的10分贝净增益波导放大器。
Opt Lett. 2024 Jan 1;49(1):33-36. doi: 10.1364/OL.511729.

引用本文的文献

1
Nanostructures for Photonics and Optoelectronics.用于光子学和光电子学的纳米结构。
Nanomaterials (Basel). 2022 May 26;12(11):1820. doi: 10.3390/nano12111820.
2
Design of Chopsticks-Shaped Heating Resistors for a Thermal Inkjet: Based on TaN Film.基于TaN薄膜的热喷墨用筷子形状加热电阻器的设计
Micromachines (Basel). 2022 May 18;13(5):787. doi: 10.3390/mi13050787.

本文引用的文献

1
Erbium-doped hybrid waveguide amplifiers with net optical gain on a fully industrial 300 mm silicon nitride photonic platform.在全工业规模的300毫米氮化硅光子平台上具有净光学增益的掺铒混合波导放大器。
Opt Express. 2020 Sep 14;28(19):27919-27926. doi: 10.1364/OE.399257.
2
Bismuth Telluride and Its Alloys as Materials for Thermoelectric Generation.碲化铋及其合金作为热电发电材料
Materials (Basel). 2014 Mar 28;7(4):2577-2592. doi: 10.3390/ma7042577.
3
Ultrafast laser plasma doping of Er ions in silica-on-silicon for optical waveguiding applications.
用于光波导应用的硅基二氧化硅中铒离子的超快激光等离子体掺杂
Opt Lett. 2016 Oct 15;41(20):4684-4687. doi: 10.1364/OL.41.004684.
4
Interface control by homoepitaxial growth in pulsed laser deposited iron chalcogenide thin films.脉冲激光沉积铁硫族化合物薄膜中通过同质外延生长实现的界面控制。
Sci Rep. 2015 Nov 9;5:16334. doi: 10.1038/srep16334.
5
Target dependent femtosecond laser plasma implantation dynamics in enabling silica for high density erbium doping.基于靶材的飞秒激光等离子体注入动力学在实现二氧化硅中高密度铒掺杂方面的应用
Sci Rep. 2015 Sep 15;5:14037. doi: 10.1038/srep14037.
6
Comparative investigation on the spectroscopic properties of Pr³⁺-doped boro-phosphate, boro-germo-silicate and tellurite glasses.掺镨硼酸磷酸盐、硼锗硅酸盐和碲酸盐玻璃光谱性能的比较研究。
Spectrochim Acta A Mol Biomol Spectrosc. 2012 Jul;93:223-7. doi: 10.1016/j.saa.2012.02.076. Epub 2012 Mar 2.
7
Absorption bleaching by stimulated emission in erbium-doped silicon-rich silicon nitride waveguides.掺铒硅富硅氮化物波导中的受激辐射吸收漂白。
Opt Lett. 2011 Jan 1;36(1):4-6. doi: 10.1364/OL.36.000004.
8
Tellurium dioxide Erbium doped planar rib waveguide amplifiers with net gain and 2.8 dB/cm internal gain.掺铒二氧化碲平面肋形波导放大器,具有净增益和2.8 dB/cm的内部增益。
Opt Express. 2010 Aug 30;18(18):19192-200. doi: 10.1364/OE.18.019192.
9
Determination of Judd-Ofelt intensity parameters from the excitation spectra for rare-earth doped luminescent materials.从稀土掺杂发光材料的激发光谱中确定 Judd-Ofelt 强度参数。
Phys Chem Chem Phys. 2010 Apr 7;12(13):3276-82. doi: 10.1039/b921581f. Epub 2010 Feb 10.
10
Enhanced light emission from erbium doped silicon nitride in plasmonic metal-insulator-metal structures.等离子体金属-绝缘体-金属结构中掺铒氮化硅的增强发光。
Opt Express. 2009 Nov 9;17(23):20642-50. doi: 10.1364/OE.17.020642.