Reddy Pulikanti Guruprasad, Pal Satyendra Prakash, Kumar Pawan, Pradeep Chullikkattil P, Ghosh Subrata, Sharma Satinder K, Gonsalves Kenneth E
School of Basic Sciences and ‡School of Computing and Electrical Engineering, Indian Institute of Technology Mandi , Kamand 175 005, Himachal Pradesh, India.
ACS Appl Mater Interfaces. 2017 Jan 11;9(1):17-21. doi: 10.1021/acsami.6b10384. Epub 2016 Dec 27.
The present report demonstrates the potential of a polyarylenesulfonium polymer, poly[methyl(4-(phenylthio)-phenyl)sulfoniumtrifluoromethanesulfonate] (PAS), as a versatile nonchemically amplified negative tone photoresist for next-generation lithography (NGL) applications starting from i-line (λ ∼ 365 nm) to extreme ultraviolet (EUV, λ ∼ 13.5 nm) lithography. PAS exhibited considerable contrast (γ), 0.08, toward EUV and patterned 20 nm features successfully.
