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通过分析发射离子数的统计分布来表征亚兆电子伏碳离子撞击的二次离子发射过程。

Characterization of secondary ion emission processes of sub-MeV C ion impacts via analysis of statistical distributions of the emitted ion number.

作者信息

Hirata K, Yamada K, Chiba A, Narumi K, Saitoh Y

机构信息

National Metrology Institute of Japan, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan.

Takasaki Advanced Radiation Research Institute, National Institutes for Quantum and Radiological Science and Technology (QST), 1233 Watanuki, Takasaki, Gumma 370-1292, Japan.

出版信息

J Chem Phys. 2016 Dec 21;145(23):234311. doi: 10.1063/1.4972061.

DOI:10.1063/1.4972061
PMID:28010077
Abstract

We report probability distributions of the number of secondary ions (SIs) emitted by sub-MeV C ion impacts on an organic polymer target and the characterization of their emission processes through the analysis of the distributions. The probability distributions were obtained by analyzing experimental SI counting data obtained by a time-of-flight SI mass spectrometer combined with pulsed primary ion beams, using an analytical model developed to derive the distributions from the experimental data. A series of probability distribution functions was investigated for ion impacts of C with sub-MeV energies (0.12-0.54 MeV), which can provide sufficient SIs per impact to determine the functions. Their complicated and undefined SI emission processes were characterized based on the determined functions.

摘要

我们报告了亚 MeV 碳离子撞击有机聚合物靶材时发射的二次离子(SI)数量的概率分布,并通过对分布的分析来表征其发射过程。概率分布是通过分析由飞行时间 SI 质谱仪结合脉冲初级离子束获得的实验 SI 计数数据得到的,使用了一个为从实验数据中推导分布而开发的分析模型。研究了一系列针对亚 MeV 能量(0.12 - 0.54 MeV)的碳离子撞击的概率分布函数,每次撞击可提供足够数量的 SI 以确定这些函数。基于所确定的函数对其复杂且不明确的 SI 发射过程进行了表征。

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