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多孔还原氧化石墨烯负载反尖晶石型镍铁氧体纳米复合材料的制备及对放射性核素的吸附去除性能。

Preparation and characterization of porous reduced graphene oxide based inverse spinel nickel ferrite nanocomposite for adsorption removal of radionuclides.

机构信息

Department of Environmental Engineering, Kwangwoon University, Seoul, 139-701, Republic of Korea.

Graduate School of Environmental Studies, Kwangwoon University, Seoul, 139-701, Republic of Korea.

出版信息

J Hazard Mater. 2017 Mar 15;326:145-156. doi: 10.1016/j.jhazmat.2016.12.035. Epub 2016 Dec 20.

Abstract

For the removal of uranium(VI) (U(VI)) and thorium(IV) (Th(IV)), graphene oxide based inverse spinel nickel ferrite (GONF) nanocomposite and reduced graphene oxide based inverse spinel nickel ferrite (rGONF) nanocomposite were prepared by co-precipitation of GO with nickel and iron salts in one pot. The spectral characterization analyses revealed that GONF and rGONF have a porous surface morphology with an average particle size of 41.41nm and 32.16nm, respectively. The magnetic property measurement system (MPMS) studies confirmed the formation of ferromagnetic GONF and superparamagnetic rGONF. The adsorption kinetics studies found that the pseudo-second-order kinetics was well tune to the U(VI) and Th(IV) adsorption. The results of adsorption isotherms showed that the adsorption of U(VI) and Th(IV) were due to the monolayer on homogeneous surface of the GONF and rGONF. The adsorptions of both U(VI) and Th(IV) were increased with increasing system temperature from 293 to 333±2K. The thermodynamic studies reveal that the U(VI) and Th(IV) adsorption onto GONF and rGONF was endothermic. GONF and rGONF, which could be separated by external magnetic field, were recycled and re-used for up to five cycles without any significant loss of adsorption capacity.

摘要

为了去除铀(VI) (U(VI)) 和钍(IV) (Th(IV)),通过将 GO 与镍和铁盐一锅共沉淀制备了基于氧化石墨烯的反尖晶石镍铁氧体 (GONF) 纳米复合材料和还原氧化石墨烯的反尖晶石镍铁氧体 (rGONF) 纳米复合材料。光谱特征分析表明,GONF 和 rGONF 具有多孔表面形态,平均粒径分别为 41.41nm 和 32.16nm。磁性测量系统 (MPMS) 研究证实了铁磁性 GONF 和超顺磁性 rGONF 的形成。吸附动力学研究发现,伪二阶动力学很好地适用于 U(VI) 和 Th(IV) 的吸附。吸附等温线的结果表明,U(VI) 和 Th(IV) 的吸附是由于 GONF 和 rGONF 均匀表面的单层吸附。随着系统温度从 293 升高到 333±2K,U(VI) 和 Th(IV) 的吸附都增加了。热力学研究表明,U(VI) 和 Th(IV) 在 GONF 和 rGONF 上的吸附是吸热的。GONF 和 rGONF 可以通过外部磁场分离,可重复使用多达五个循环,而吸附容量没有明显损失。

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