IBM Almaden Research Center, 650 Harry Road, San Jose, CA 95120, USA.; Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle, Germany.
Max Planck Institute for Solid State Research, Heisenbergstasse 1, 70569 Stuttgart, Germany.
Sci Adv. 2016 Dec 16;2(12):e1601742. doi: 10.1126/sciadv.1601742. eCollection 2016 Dec.
Magnetoresistance (MR), the change of a material's electrical resistance in response to an applied magnetic field, is a technologically important property that has been the topic of intense study for more than a quarter century. We report the observation of an unusual "butterfly"-shaped titanic angular magnetoresistance (AMR) in the nonmagnetic Dirac material, ZrSiS, which we find to be the most conducting sulfide known, with a 2-K resistivity as low as 48(4) nΩ⋅cm. The MR in ZrSiS is large and positive, reaching nearly 1.8 × 10 percent at 9 T and 2 K at a 45° angle between the applied current ( || ) and the applied field (90° is || ). Approaching 90°, a "dip" is seen in the AMR, which, by analyzing Shubnikov de Haas oscillations at different angles, we find to coincide with a very sharp topological phase transition unlike any seen in other known Dirac/Weyl materials. We find that ZrSiS has a combination of two-dimensional (2D) and 3D Dirac pockets comprising its Fermi surface and that the combination of high-mobility carriers and multiple pockets in ZrSiS allows for large property changes to occur as a function of angle between applied fields. This makes it a promising platform to study the physics stemming from the coexistence of 2D and 3D Dirac electrons as well as opens the door to creating devices focused on switching between different parts of the Fermi surface and different topological states.
磁阻(MR),即材料电阻随外加磁场变化的现象,是一种具有重要技术意义的特性,已经成为 25 年来的研究热点。我们观察到非磁性狄拉克材料 ZrSiS 中存在一种异常的“蝴蝶”形钛磁各向异性磁阻(AMR),ZrSiS 是已知电导率最高的硫化物,在 2 K 时的电阻率低至 48(4) nΩ⋅cm。ZrSiS 的磁阻很大且为正值,在 9 T 和 2 K 下,外加电流( || )和外加磁场(90°为 || )之间夹角为 45°时,磁阻可达近 1.8×10%。当接近 90°时,AMR 出现“下降”,通过分析不同角度的舒布尼科夫-德哈斯振荡,我们发现这与任何已知的狄拉克/外尔材料都不同的非常尖锐的拓扑相变相吻合。我们发现,ZrSiS 的费米面由二维(2D)和 3D 狄拉克口袋组成,其高迁移率载流子和多个口袋的组合使得在施加磁场的角度变化时,材料性能会发生很大变化。这使其成为研究二维和三维狄拉克电子共存物理的有前途的平台,并为创建专注于切换费米面不同部分和不同拓扑状态的器件打开了大门。