Wang Lin, Gautier Brice, Sabac Andrei, Bremond Georges
Institut des Nanotechnologies de Lyon (INL), Lyon University, CNRS UMR 5270, INSA Lyon, 7 avenue Jean Capelle 69621 Villeurbanne, France.
Ultramicroscopy. 2017 Mar;174:46-49. doi: 10.1016/j.ultramic.2016.12.016. Epub 2016 Dec 23.
Scanning capacitance microscopy (SCM) was performed on an n-type Si multilayer structure doped by phosphorus whose concentration ranges from 2×10 to 2×10cm. Three types of tips were used, i.e. fresh Pt/Ir coated tip, worn Pt/Ir coated tip and non-coated commercial Si tip. The use of fresh Pt/Ir coated tips produces SCM result in good agreement with the doping profile including the correct identification of the carrier type. In contrast, a worn Pt/Ir coated tip which has lost its metal coating and a non-coated tip will fail to recognize successfully the carrier type for phosphorus dopant concentration above 8×10cm (identifying as p instead of n) due to the tip depletion effect. These results alert us to carefully interpret the SCM results, especially in the case for identification of carrier type inside the sample of interest which is unknown.
对由磷掺杂的n型硅多层结构进行了扫描电容显微镜（SCM）检测，其浓度范围为2×10至2×10cm 。使用了三种类型的探针，即新鲜的铂/铱涂层探针、磨损的铂/铱涂层探针和未涂层的商用硅探针。使用新鲜的铂/铱涂层探针所产生的SCM结果与掺杂分布高度吻合，包括对载流子类型的正确识别。相比之下，由于探针耗尽效应，失去金属涂层的磨损铂/铱涂层探针和未涂层探针对于磷掺杂剂浓度高于8×10cm 的情况将无法成功识别载流子类型（识别为p型而非n型）。这些结果提醒我们要谨慎解读SCM结果，尤其是在识别未知感兴趣样品内部载流子类型的情况下。
