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气相中二乙烯基硅(H2SiSi)瞬态的形成。

Gas-Phase Formation of the Disilavinylidene (H SiSi) Transient.

机构信息

Department of Chemistry, University of Hawai'i at Manoa, Honolulu, HI, 96822, USA.

Department of Chemistry, Florida A&M University, Tallahassee, FL, 32307, USA.

出版信息

Angew Chem Int Ed Engl. 2017 Jan 24;56(5):1264-1268. doi: 10.1002/anie.201611107. Epub 2017 Jan 2.

Abstract

The hitherto elusive disilavinylidene (H SiSi) molecule, which is in equilibrium with the mono-bridged (Si(H)SiH) and di-bridged (Si(H )Si) isomers, was initially formed in the gas-phase reaction of ground-state atomic silicon (Si) with silane (SiH ) under single-collision conditions in crossed molecular beam experiments. Combined with state-of-the-art electronic structure and statistical calculations, the reaction was found to involve an initial formation of a van der Waals complex in the entrance channel, a submerged barrier to insertion, intersystem crossing (ISC) from the triplet to the singlet manifold, and hydrogen migrations. These studies provide a rare glimpse of silicon chemistry on the molecular level and shed light on the remarkable non-adiabatic reaction dynamics of silicon, which are quite distinct from those of isovalent carbon systems, providing important insight that reveals an exotic silicon chemistry to form disilavinylidene.

摘要

迄今难以捉摸的二硅烯基(H SiSi)分子,与单桥联(Si(H)SiH)和双桥联(Si(H )Si)异构体处于平衡状态,最初是在气相条件下形成的,在交叉分子束实验中,基态原子硅(Si)与硅烷(SiH )在单次碰撞条件下反应。结合最先进的电子结构和统计计算,发现该反应涉及入口通道中范德华复合物的初始形成、插入的淹没势垒、三重态到单重态的系间窜越(ISC)以及氢迁移。这些研究提供了硅化学在分子水平上的罕见一瞥,并阐明了硅的显著非绝热反应动力学,这与等电子碳系统有很大的不同,为形成二硅烯基提供了重要的见解,揭示了一种奇特的硅化学。

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