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光刻制作的扫描电子显微镜放大率标准原型的实验室间研究。

Interlaboratory Study on the Lithographically Produced Scanning Electron Microscope Magnification Standard Prototype.

作者信息

Postek Michael T, Vladar Andras E, Jones Samuel N, Keery William J

机构信息

National Institute of Standards and Technology, Gaithersburg, MD 20899-0001.

出版信息

J Res Natl Inst Stand Technol. 1993 Jul-Aug;98(4):447-467. doi: 10.6028/jres.098.033.

Abstract

NIST is in the process of developing a new scanning electron microscope (SEM) magnification calibration reference standard useful at both high and low accelerating voltages. This standard will be useful for all applications to which the SEM is currently being used, but it has been specifically tailored to meet many of the particular needs of the semiconductor industry. A small number of test samples with the pattern were prepared on silicon substrates using electron beam lithography at the National Nanofabrication Facility at Cornell University. The structures were patterned in titanium/palladium with maximum nominal pitch structures of approximately 3000 μm scaling down to structures with minimum nominal pitch of 0.4 (μm. Eighteen of these samples were sent out to a total of 35 university, research, semiconductor and other industrial laboratories in an interlaboratory study. The purpose of the study was to test the SEM instrumentation and to review the suitability of the sample design. The laboratories were asked to take a series of micrographs at various magnifications and accelerating voltages designed to test several of the aspects of instrument performance related to general SEM operation and metrology. If the instrument in the laboratory was used for metrology, the laboratory was also asked to make specific measurements of the sample. In the first round of the study (representing 18 laboratories), data from 35 instruments from several manufacturers were obtained and the second round yielded information from 14 more instruments. The results of the analysis of the data obtained in this study are presented in this paper.

摘要

美国国家标准与技术研究院(NIST)正在开发一种新型扫描电子显微镜(SEM)放大倍率校准参考标准,该标准在高、低加速电压下均适用。此标准将适用于目前SEM所应用的所有领域,但它是专门为满足半导体行业的许多特殊需求而量身定制的。在康奈尔大学的国家纳米加工设施中,使用电子束光刻技术在硅基板上制备了少量带有该图案的测试样品。这些结构采用钛/钯进行图案化,最大标称间距结构约为3000μm,最小标称间距结构为0.4μm。在一项实验室间研究中,将其中18个样品分发给了总共35个大学、研究机构、半导体及其他工业实验室。该研究的目的是测试SEM仪器,并评估样品设计的适用性。要求各实验室在不同放大倍率和加速电压下拍摄一系列显微照片,以测试与SEM一般操作和计量相关的仪器性能的几个方面。如果实验室中的仪器用于计量,还要求该实验室对样品进行具体测量。在研究的第一轮(涉及18个实验室)中,获得了来自几家制造商的35台仪器的数据,第二轮又从另外14台仪器中获取了信息。本文展示了本研究所得数据分析的结果。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5df8/4907700/716473e8f45d/jresv98n4p447_a1bf1.jpg

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