Hu Lei, Wei Dongshan
Institute of Theoretical Chemistry, International Joint Research Laboratory of Nano-Micro Architecture Chemistry, Jilin University, Changchun 130023, China and Chongqing Key Laboratory of Multi-scale Manufacturing Technology, Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing, 400714, China.
Chongqing Key Laboratory of Multi-scale Manufacturing Technology, Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing, 400714, China.
Phys Chem Chem Phys. 2017 Jan 18;19(3):2235-2244. doi: 10.1039/c6cp07573h.
Very recently, researchers have found that low-dimensional materials display more intriguing second-order nonlinear optical (NLO) phenomena and possess larger second-order NLO susceptibilities than the corresponding bulk forms. Here, we perform a systematic first-principles study of the second-order NLO properties and linear electro-optical coefficients of GeC bulk polytypes, g-GeC and corresponding nanotubes. Remarkably, the second-order NLO susceptibility χ of g-GeC and corresponding nanotubes can be comparable with that of the archetypical NLO semiconductor GaAs. Therefore, g-GeC and corresponding nanotubes have potential applications in NLO and electro-optical devices. We also quantitatively calculate the second-order NLO response contributions from the high density of states near the VBM via dividing NLO susceptibilities into contributions from different valence bands, revealing that the high density of states is the origin of the strong NLO responses in g-GeC and corresponding nanotubes. Such a mechanism will help to find excellent NLO materials more effectively. Moreover, the prominent features in the spectra of χ(-2ω, ω, ω) of GeC polytypes are analyzed in terms of single- and double-photon resonances.
最近,研究人员发现低维材料展现出更引人入胜的二阶非线性光学(NLO)现象,并且比相应的块状材料具有更大的二阶NLO极化率。在此,我们对GeC块状多型体、g-GeC及其相应的纳米管的二阶NLO性质和线性电光系数进行了系统的第一性原理研究。值得注意的是,g-GeC及其相应纳米管的二阶NLO极化率χ可与典型的NLO半导体GaAs相媲美。因此,g-GeC及其相应纳米管在NLO和电光器件中具有潜在应用。我们还通过将NLO极化率划分为来自不同价带的贡献,定量计算了价带顶附近高能态密度对二阶NLO响应的贡献,揭示了高能态密度是g-GeC及其相应纳米管中强烈NLO响应的起源。这种机制将有助于更有效地找到优异的NLO材料。此外,从单光子和双光子共振的角度分析了GeC多型体的χ(-2ω, ω, ω)光谱中的显著特征。