Haider M Baseer
Department of Physics, King Fahd University of Petroleum and Minerals, Dhahran, 31261, Saudi Arabia.
Affiliate Center of Excellence for Nanotechnology, King Fahd University of Petroleum and Minerals, Dhahran, 31261, Saudi Arabia.
Nanoscale Res Lett. 2017 Dec;12(1):5. doi: 10.1186/s11671-016-1769-y. Epub 2017 Jan 4.
Zinc nitride thin films were grown on fused silica substrates at 300 °C by radio frequency magnetron sputtering. Films were grown at different N/Ar flow rate ratios of 0.20, 0.40, 0.60, 0.80, and 1.0. All the samples have grain-like surface morphology with an average surface roughness ranging from 4 to 5 nm and an average grain size ranging from 13 to16 nm. ZnN samples grown at lower N/Ar ratio are polycrystalline with secondary phases of ZnO present, whereas at higher N/Ar ratio, no ZnO phases were found. Highly aligned films were achieved at N/Ar ratio of 0.60. Hall effect measurements reveal that films are n-type semiconductors, and the highest carrier concentration and Hall mobility was achieved for the films grown at N/Ar ratio of 0.60. X-ray photoelectron study was performed to confirm the formation of Zn-N bonds and to study the presence of different species in the film. Depth profile XPS analyses of the films reveal that there is less nitrogen in the bulk of the film compared to the nitrogen on the surface of the film whereas more oxygen is present in the bulk of the films possibly occupying the nitrogen vacancies.
通过射频磁控溅射在300°C的熔融石英衬底上生长了氮化锌薄膜。薄膜在不同的N/Ar流量比0.20、0.40、0.60、0.80和1.0下生长。所有样品均具有颗粒状表面形貌，平均表面粗糙度在4至5nm之间，平均晶粒尺寸在13至16nm之间。在较低N/Ar比下生长的ZnN样品为多晶，存在ZnO第二相，而在较高N/Ar比下未发现ZnO相。在N/Ar比为0.60时获得了高度取向的薄膜。霍尔效应测量表明薄膜为n型半导体，在N/Ar比为0.60时生长的薄膜具有最高的载流子浓度和霍尔迁移率。进行了X射线光电子能谱研究以确认Zn-N键的形成并研究薄膜中不同物种的存在。薄膜的深度剖面XPS分析表明，与薄膜表面的氮相比，薄膜主体中的氮较少，而薄膜主体中存在更多的氧，可能占据了氮空位。
