Chevallier T, Benayad A, Le Blevennec G, Chandezon F
Univ Grenoble Alpes, CEA-LITEN, 17 rue des martyrs, 38000 Grenoble, France.
Univ Grenoble Alpes, CEA, LETI, Minatec Campus, Grenoble, France.
Phys Chem Chem Phys. 2017 Jan 18;19(3):2359-2363. doi: 10.1039/c6cp06509k.
The systematic measurement of the photoluminescence quantum yield and the recombination lifetime of a given phosphor allows for the quantification of both radiative and non-radiative recombination rates. This analysis therefore separates the two types of phenomena influencing the quantum efficiency of the phosphor. When associated with other materials characterizations, this powerful tool allows for the determination of the relationship between the structural properties and the efficiency of the photoluminescence process. This article presents this method and its direct application to emerging luminescent quaternary semiconductor nanocrystals. First, the direct effect of disorder on non-radiative recombination rate is demonstrated. Then, strong evidence concerning the nature of the donor and acceptor defects involved in the photoluminescence process of these materials are obtained using XPS.
对给定荧光粉的光致发光量子产率和复合寿命进行系统测量，可以对辐射和非辐射复合速率进行量化。因此，这种分析将影响荧光粉量子效率的两种现象区分开来。当与其他材料表征相结合时，这个强大的工具可以确定结构性质与光致发光过程效率之间的关系。本文介绍了这种方法及其在新兴的发光四元半导体纳米晶体中的直接应用。首先，证明了无序对非辐射复合速率的直接影响。然后，使用X射线光电子能谱（XPS）获得了有关这些材料光致发光过程中涉及的施主和受主缺陷性质的有力证据。
