CEA, Liten-DTNM, F-38054 Grenoble Cedex 9, France.
Univ. Grenoble Alpes, INAC-SPrAM, F-38054 Grenoble Cedex 9, France and CNRS, SPrAM, F-38054 Grenoble Cedex 9, France and CEA, INAC-SPrAM, F-38054 Grenoble Cedex 9, France.
Nanoscale. 2016 Apr 14;8(14):7612-20. doi: 10.1039/c5nr07082a.
AgInS2-ZnS (ZAIS) nanocrystals are very good candidates for easily synthesized, highly efficient cadmium-free nano-phosphors. They can be employed for the development of next generation white-LED technologies, taking advantage of their nanometric size. This paper describes the combined use of time-resolved emission spectroscopy and photoluminescence quantum yield measurements to quantitatively compare the efficiency of each recombination pathway involved in the photoluminescence of ZAIS nanocrystals. This approach, applied to nanocrystals of different sizes, compositions and surface chemistry revealed the critical role of surface effects. Moreover, we developed a new type of surface passivation that increases the photoluminescence quantum yield of all nanocrystal compositions by 15 to 20%. This molecular surface passivation can be applied as a replacement or in addition to the already established ZnS shell passivation method.
AgInS2-ZnS (ZAIS) 纳米晶体是非常好的候选材料，它们易于合成且不含镉，是高效的纳米荧光粉。它们可以被用于开发下一代的白光 LED 技术，利用其纳米尺寸的优势。本文描述了将时间分辨发射光谱和光致发光量子产率测量相结合，以定量比较 ZAIS 纳米晶体光致发光中每种复合途径的效率。这种方法应用于不同尺寸、组成和表面化学的纳米晶体，揭示了表面效应的关键作用。此外，我们开发了一种新的表面钝化方法，将所有纳米晶体组成的光致发光量子产率提高了 15%到 20%。这种分子表面钝化可以替代或补充已经建立的 ZnS 壳层钝化方法。
